N Channel MOSFET M04N60
4.0A
TO-220
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSTa=25
PARAMETERS SYMBOL
MIN
TYP
MAX
UNITS
CONDITION
Continuous Drain Current
I
D
3.6
A
V
GS
=10 V, Ta=25
Drain-Source Breakdown Voltage
V
(BR)DSS
600
V
V
GS
= 0 V, I
D
= 250 A
Drain-Source Leakage Current
I
DSS
0.1
0.5
mA V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125
Gate-Source Leakage Current-Forward
I
GSSF
100
nA
V
gsf
= 20 V, V
DS
= 0 V
Gate-Source Leakage Current-Reverse
I
GSSR
100
nA
V
gsr
= 20 V, V
DS
= 0 V
Gate Threshold Voltage
V
GS(th)
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250 A
Static Drain-Source On-Resistance
R
DS(on)
2.2
V
GS
= 10 V, I
D
= 2.2A *
Forward Transconductance
g
FS
2.5 S
V
DS
= 50 V, I
D
= 2.2A *
Input Capacitance
C
iss
660 pF
Output Capacitance
C
oss
86 pF
Reverse Transfer Capacitance
C
rss
19 pF
V
DS
= 25 V, V
GS
= 0 V, f = 1.0 MHz
Turn-On Delay Time
t
d(on)
11 ns
Rise Time
t
r
13 ns
Turn-Off Delay Time
t
d(off)
35 ns
Fall Time
t
f
14 ns
V
DD
= 300 V, I
D
=3.6 A, V
GS
= 10 V,
R
G
= 12 *
Total Gate Charge
Q
g
31
nC
Gate-Source Charge
Q
gs
4.6
nC
Gate-Drain Charge
Q
gd
17
nC
V
DS
= 360 V, I
D
= 3.6 A, V
GS
= 10 V *
Internal Drain Inductance
L
D
4.5
nH
Measured from the drain lead 0.25" from package to
center of die
Internal Drain Inductance
L
S
7.5
nH
Measured from the source lead 0.25" from package
to source bond pad
Total Power Dispation
P
D
74
W
Thermal Resistance Junction to Case
JC
1.7
/W
Operating and Storage Temperature
T
J,
T
STG
-55
150
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
V
SD
1.6
V
Forward Turn-On Time
t
on
** ns
Reverse Recovery Time
t
rr
370 ns
I
S
= 3.6 A, V
GS
= 0 V, d
IS
/d
t
= 100A/s
* Pulse Test: Pulse Width 300s, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
PDF 
ZIP