N Channel Enchancement Mode MOSFET ST2302
3.6A
DESCRIPTION
The ST2302 is the N-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION
SOT-23-3L
1.Gate 2.Source 3.Drain
S: Subcontractor Y: Year Code A: Process Code
Page 1
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
FEATURE
20V/3.6A, R
DS(ON)
= 80m-ohm
@VGS = 4.5V
20V/2.4A, R
DS(ON)
= 95m-ohm
@VGS = 2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
3
1
2
D
G S
3
1
2
S02YA
N Channel Enchancement Mode MOSFET ST2302
3.6A
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter Symbol
Typical
Unit
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
+/-12 V
Continuous Drain Current (TJ=150)
T
A
=25
T
A
=70
I
D
2.8
2.2
A
Pulsed Drain Current
I
DM
10 A
Continuous Source Current (Diode Conduction)
I
S
1.6 A
Power Dissipation
T
A
=25
T
A
=70
P
D
1.25
0.8
W
Operation Junction Temperature
T
J
150
Storgae Temperature Range
T
STG
-55/150
Thermal Resistance-Junction to Ambient
R
JA
100 /W
Page2
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
N Channel Enchancement Mode MOSFET ST2302
3.6A
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter Symbol
Condition
Min
Typ
Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
=0V,I
D
=10uA 20
V
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=50uA 0.45
1.2 V
Gate Leakage Current
I
GSS
V
DS
=0V,V
GS
=8V 100 nA
V
DS
=20V,V
GS
=0V 1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=20V,V
GS
=0V
T
J
=55
10
uA
On-State Drain Current
I
D(on)
V
DS
5V,V
GS
=4.5V
V
DS
5V,V
GS
=2.5V
6
4
A
Drain-source On-Resistance
R
DS(on)
V
GS
=4.5V,I
D
=3.6A
V
GS
=2.5V,I
D
=3.1A
0.05
0.07
0.08
0.095
Forward Transconductance
g
fs
V
DS
=5V,I
D
=3.6V 10 S
Diode Forward Voltage
V
SD
I
S
=-1.6A,V
GS
=0V 0.85
1.2
V
Dynamic
Total Gate Charge
Qg
5.4
10
Gate-Source Charge
Qgs
0.65
Gate-Drain Charge
Qgd
V
DS
=10V,V
GS
=4.5V
I
D
-3.6A
1.4
nC
Input Capacitance
Ciss
340
Output Capacitance
Coss
115
Reverse Transfer Capacitance
Crss
V
DS
=10V,V
GS
=0V
F=1MHz
33
pF
12 25
Turn-On Time
t
d(on)
t
r
36 60
34 60
Turn-Off Time
t
d(off)
t
f
V
DD
=10V,R
L
=5.5
I
D
=3.6A,V
GEN
=4.5V
R
G
=6
10 25
nS
Page3
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
N Channel Enchancement Mode MOSFET ST2302
3.6A
SOT-23-3L PACKAGE OUTLINE
Page4
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
N Channel Enchancement Mode MOSFET ST2302
3.6A
TYPICAL CHARACTERISTICS
Page 5
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