N Channel Enchancement Mode MOSFET ST2304
2.5A
DESCRIPTION
The ST2304 is the N-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION
SOT-23-3L
1.Gate 2.Source 3.Drain
S: Subcontractor Y: Year Code W: Process Code
Page 1
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
FEATURE
30V/2.5A, R
DS(ON)
= 70m-ohm
@VGS = 10V
30V/2.0A, R
DS(ON)
= 105m-ohm
@VGS = 4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
3
1
2
D
G S
3
1
2
S04YA
N Channel Enchancement Mode MOSFET ST2304
2.5A
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter Symbol
Typical
Unit
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
20 V
Continuous Drain Current (TJ=150)
T
A
=25
T
A
=70
I
D
2.5
2.0
A
Pulsed Drain Current
I
DM
10 A
Continuous Source Current (Diode Conduction)
I
S
1.25 A
Power Dissipation
T
A
=25
T
A
=70
P
D
1.25
0.8
W
Operation Junction Temperature
T
J
150
Storgae Temperature Range
T
STG
-55/150
Thermal Resistance-Junction to Ambient
R
JA
100 /W
Page2
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
N Channel Enchancement Mode MOSFET ST2304
2.5A
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter Symbol
Condition
Min
Typ
Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
=0V,I
D
=250uA 30
V
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
1.0 3.0
V
Gate Leakage Current
I
GSS
V
DS
=0V,V
GS
=20V 100 nA
V
DS
=30V,V
GS
=1.0V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=30V,V
GS
=0V
T
J
=55
10
uA
On-State Drain Current
I
D(on)
V
DS
4.5V,V
GS
=10V
V
DS
4.5V,V
GS
=4.5V
6
4
A
Drain-source On-Resistance
R
DS(on)
V
GS
=10V,I
D
=2.5A
V
GS
=4.5V,I
D
=2.0A
0.055
0.08
0.07
0.105
Forward Transconductance
g
fs
V
DS
=4.5V,I
D
=2.5V 4.6 S
Diode Forward Voltage
V
SD
I
S
=-1.25A,V
GS
=0V 0.77
1.2
V
Dynamic
Total Gate Charge
Qg
4.5
10
Gate-Source Charge
Qgs
0.8
Gate-Drain Charge
Qgd
V
DS
=15V,V
GS
=4.5V
I
D
2.5A
1.0
nC
Input Capacitance
Ciss
240
Output Capacitance
Coss
110
Reverse Transfer Capacitance
Crss
V
DS
=10V,V
GS
=0V
F=1MHz
17
pF
8 20
Turn-On Time
t
d(on)
t
r
12 30
17 35
Turn-Off Time
t
d(off)
t
f
V
DD
=15V,R
L
=15
I
D
=1.0A,V
GEN
=10V
R
G
=6
8 20
nS
Page3
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
N Channel Enchancement Mode MOSFET ST2304
2.5A
SOT-23-3L PACKAGE OUTLINE
Page4
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
N Channel Enchancement Mode MOSFET ST2304
2.5A
TYPICAL CHARACTERICTICS (25 Unless noted)
Page 5
N Channel Enchancement Mode MOSFET ST2304
2.5A
TYPICAL CHARACTERICTICS (25 Unless noted)
Page 6
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