HF SSB APPLICATIONS
RF & MICROWAVE TRANSISTORS
.380 4LFL (M113)
epoxy sealed
.
30 MHz
.
28 VOLTS
.
IMD
-
28 dB
.
COMMON EMITTER
.
GOLD METALLIZATION
.
P
OUT
=
30 W MIN. WITH 18 dB GAIN
DESCRIPTION
The SD1224-10 is a 28 V epitaxial silicon NPN
planar transistor designed primarily for SSB com-
munications. This device utilizes emitter ballasting
for improved ruggedness and reliability.
PIN CONNECTION
BRANDING
1224-10
ORDER CODE
SD1224-10
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
65
V
V
CEO
Collector-Emitter Voltage
36
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Device Current
4.5
A
P
DISS
Power Dissipation
80
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
2.2
C/W
SD1224-10
1. Collector
3. Base
2. Emitter
4. Emitter
THERMAL DATA
October 1992
1/3
Ref.: Dwg. No.12-0
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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SD1224-10
3/3
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