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Электронный компонент: 1N5711

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1N 5711
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode featuring high break-
down, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection
and pulse application with broad dynamic range.
Matched batches are available on request.
August 1999 Ed: 1A
DO 35
(Glass)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive Peak Reverse Voltage
70
V
I
F
Forward Continuous Current*
T
a
= 25
C
15
mA
P
tot
Power Dissipation*
T
a
= 25
C
430
mW
T
stg
T
j
Storage and Junction Temperature Range
- 65 to 200
- 65 to 200
C
T
L
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230
C
ABSOLUTE RATINGS (limiting values)
Symbol
Test Conditions
Value
Unit
R
th(j-a)
Junction-ambient*
400
C/W
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
** Pulse test: t
p
300
s
<
2%.
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
BR
T
amb
= 25
C
I
R
= 10
A
70
V
V
F
* *
T
amb
= 25
C
I
F
= 1mA
0.41
V
T
amb
= 25
C
I
F
= 15mA
1
I
R
* *
T
amb
= 25
C
V
R
= 50V
0.2
A
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C
T
amb
= 25
C
V
R
= 0V
f = 1MHz
2
pF
T
amb
= 25
C
I
F
= 5mA
Krakauer Method
100
ps
DYNAMIC CHARACTERISTICS
1/3
Figure 1. Forward current versus forward
voltage at low level (typical values).
Figure 2. Capacitance C versus reverse
applied voltage V
R
(typical values).
Figure 3. Reverse current versus ambient
temperature.
Figure 4. Reverse current versus continuous
reverse voltage (typical values).
1N 5711
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Cooling method : by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.15g
PACKAGE MECHANICAL DATA
DO 35 Glass
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval
of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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note 2
B
A
B
C
note 1
note 1
D
D
O
/
O
/
O
/
E
E
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
3.05
4.50
0.120
0.177
B
1.53
2.00
0.060
0.079
C
12.7
0.500
D
0.458
0.558
0.018
0.022
1N 5711
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