2N1613
2N1711
January 1989
SWITCHES AND UNIVERSAL AMPLIFIERS
The 2N1613 and 2N1711 are silicon planar epitaxial
NPN transistors in Jedec TO-39 metal case. They
are designed for use in high-performance amplifier,
oscillator and switching circuits.
The 2N1711 is also used to advantage in amplifiers
where low noise is an important factor.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
V
CBO
Collector-base Voltage (I
E
= 0)
75
V
V
CER
Collector-emitter Voltage (R
BE
10
)
50
V
V
EBO
Emitter-base Voltage (I
C
= 0)
7
V
I
C
Collector Current
500
mA
P
t o t
Total Power Dissipation at T
amb
25
C
at T
c as e
25
C
at T
c as e
100
C
0.8
3
1.7
W
W
W
T
s t g
, T
j
Storage and Junction Temperature
65 to 200
C
Products approved to CECC 50002-104 avail-
able on request.
DESCRIPTION
TO-39
INTERNAL SCHEMATIC DIAGRAM
1/5
ELECTRICAL CHARACTERISTICS (T
amb
= 25
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cutoff Current
(I
E
= 0)
V
CB
= 60 V
V
CB
= 60 V
T
am b
= 150
C
10
10
nA
A
I
E BO
Emitter Cutoff Current
(I
C
= 0)
V
EB
= 5 V
for 2N 16 13
for 2N 17 11
10
5
nA
nA
V
( BR) CBO
Collector-base Breakdown
Voltage
I
C
= 0.1 mA
75
V
V
(BR)CE R
*
Collector-emitter
Breakdown Voltage
(R
B E
10
)
I
C
= 10 mA
50
V
V
( BR) EBO
Emitter-base Breakdown
Voltage (I
C
= 0)
I
E
= 0.1 mA
7
V
V
CE (s at )
*
Collector-emitter
Saturation Voltage
I
C
= 150 mA
I
B
= 15 mA
0.5
1.5
V
V
BE (s at )
*
Base-emitter Saturation
Voltage
I
C
= 150 mA
I
B
= 15 mA
0.95
1.3
V
h
F E
*
DC Current Gain
for 2 N16 13
I
C
= 0.01 mA
I
C
= 0.1 mA
I
C
= 10 mA
I
C
= 150 mA
I
C
= 500 mA
I
C
= 10 mA
T
amb
= 55
C
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
20
35
40
20
20
35
50
80
80
55
35
120
h
F E
*
DC Current Gain
for 2 N17 11
I
C
= 0.01 mA
I
C
= 0.1 mA
I
C
= 10 mA
I
C
= 150 mA
I
C
= 500 mA
I
C
= 10 mA
T
amb
= 55
C
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
20
35
60
80
130
130
75
65
300
h
f e
Small Signal Current Gain for 2 N16 13
I
C
= 1 mA
f = 1 kHz
for 2 N17 11
I
C
= 1 mA
f = 1 kHz
V
CE
= 10 V
V
CE
= 10 V
30
70
70
135
150
300
f
t
Transition Frequency
I
C
= 50 mA
f = 20 MHz
V
CE
= 10 V
for 2N 16 13
for 2N 17 11
60
70
80
100
MHz
MHz
C
EBO
Emitter-base Capacitance
I
C
= 0
f = 1 MHz
V
EB
= 0.5 V
50
80
pF
C
CBO
Collector-base
Capacitance
I
E
= 0
f = 1 MHz
V
CB
= 10 V
18
25
pF
* Pulsed : pulse duration = 300
s, duty cycle = 1 %.
THERMAL DATA
R
t h j- cas e
R
t h j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
58
219
C/W
C/W
2N1613-2N1711
2/5
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
NF
Noise Figure
I
C
= 0.3 mA
R
9
= 510
V
CE
= 10 V
f = 1 kHz
for 2N 16 13
for 2N 17 11
6
3.5
12
8
dB
dB
h
ie
Input Impedance
I
C
= 1 mA
f = 1 KHz
V
CE
= 5 V
for 2N 16 13
for 2N 17 11
2.2
4.4
k
k
h
r e
Reverse Voltage Ratio
I
C
= 1 mA
f = 1 kHz
V
CE
= 5 V
for 2N 16 13
for 2N 17 11
3.6x10
4
7.3x10
4
h
o e
Output Admittance
I
C
= 1 mA
f = 1 kHz
V
CE
= 5 V
for 2N 16 13
for 2N 17 11
12.5
23.8
S
S
* Pulsed : pulse duration = 300
s, duty cycle = 1 %.
2N1613-2N1711
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
12.7
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
L
45
o
(typ.)
L
G
I
D
A
F
E
B
H
TO39 MECHANICAL DATA
P008B
2N1613-2N1711
4/5
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
2N1613-2N1711
5/5
PDF 
ZIP