2N2102
January 1989
GENERAL PURPOSE AMPLIFIER AND SWITCH
The 2N2102 is a silicon planar epitaxial NPN tran-
sistor in Jedec TO-39 metal case. It is intended for
a wide variety of small-signal and medium power ap-
plications in military and industrial equipments.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
V
CBO
Collector-base Voltage (I
E
= 0)
120
V
V
CEO
Collector-emitter Voltage (I
B
= 0)
65
V
V
CER
Collector-emitter Voltage (R
BE
10
)
80
V
V
EBO
Emitter-base Voltage (I
C
= 0)
7
V
I
C
Collector Current
1
A
P
t o t
Total Power Dissipation at T
amb
25
C
at T
c as e
25
C
1
5
W
W
T
s t g
, T
j
Storage and Junction Temperature
65 to 200
C
DESCRIPTION
TO-39
INTERNAL SCHEMATIC DIAGRAM
1/4
ELECTRICAL CHARACTERISTICS (T
amb
= 25
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cutoff Current
(I
E
= 0)
V
CB
= 60 V
V
CB
= 60 V
T
am b
= 150
C
2
2
nA
A
I
E BO
Emitter Cutoff Current
(I
C
= 0)
V
E B
= 5 V
5
nA
V
( BR) CBO
Collector-base Breakdown
Voltage (I
E
= 0)
I
C
= 100
A
120
V
V
CEO ( su s)
*
Collector-emitter Sustaining
Voltage (I
B
= 0)
I
C
= 30 mA
65
V
V
CE (s at )
*
Collector-emitter Saturation
Voltage
I
C
= 150 mA
I
B
= 15 mA
0.5
V
V
B E (s at )
*
Base-emitter Saturation
Voltage
I
C
= 150 mA
I
B
= 15 mA
1.1
V
h
F E
*
DC Current Gain
I
C
= 10
A
I
C
= 100
A
I
C
= 10 mA
I
C
= 150 mA
I
C
= 500 mA
I
C
= 1 A
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
10
20
35
40
25
10
120
h
f e
High Frequency Current
Gain
I
C
= 50 mA
f = 20 MHz
V
CE
= 10 V
6
NF
Noise Figure
I
C
= 300
A
BW = 1 Hz
V
CE
= 10 V
f = 1 KHz
R
G
= 510
8
dB
C
CBO
Collector-base Capacitance
I
E
= 0
f = 1 MHz
V
CB
= 10 V
15
pF
C
EBO
Emitter-base Capacitance
I
C
= 0
f = 1 MHz
V
EB
= 0.5 V
80
pF
* Pulsed : pulse duration = 300
s, duty cycle = 1 %.
THERMAL DATA
R
t h j- cas e
R
t h j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
35
175
C/W
C/W
2N2102
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
12.7
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
L
45
o
(typ.)
L
G
I
D
A
F
E
B
H
TO39 MECHANICAL DATA
P008B
2N2102
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
2N2102
4/4
PDF 
ZIP