2N2369
January 1989
HIGH-FREQUENCY SATURATED SWITCH
The 2N2369 is a silicon planar epitaxial NPN tran-
sistor in Jedec TO-18 metal case. It is designed spe-
cifically for high-speed saturated switching applica-
tions at current levels from 100
A to 100 mA.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
V
CBO
Collector-base Voltage (I
E
= 0)
40
V
V
CES
Collector-emitter Voltage (V
BE
= 0)
40
V
V
CEO
Collector-emitter Voltage (I
B
= 0)
15
V
V
EBO
Emitter-base Voltage (I
C
= 0)
4.5
V
I
CM
Collector Peak Current (t = 10
s)
0.5
A
P
t o t
Total Power Dissipation at T
amb
25
C
at T
c as e
25
C
at T
c as e
100
C
0.36
1.2
0.68
W
W
W
T
s t g
, T
j
Storage and Junction Temperature
65 to 200
C
Products approved to CECC 50004-022/023 available on request.
DESCRIPTION
TO-18
INTERNAL SCHEMATIC DIAGRAM
1/4
ELECTRICAL CHARACTERISTICS (T
amb
= 25
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cutoff
Current (I
E
= 0)
V
CB
= 20 V
V
CB
= 20 V
T
am b
= 150
C
0.4
30
A
A
V
( BR) CBO
Collector-base Breakdown
Voltage (I
E
= 0)
I
C
= 10
A
40
V
V
(BR) CE S
Collector-emitter Breakdown
Voltage (V
BE
= 0)
I
C
= 10
A
40
V
V
(BR) CEO
*
Collector-emitter Breakdown
Voltage (I
B
= 0)
I
C
= 10 mA
15
V
V
( BR) EBO
Emitter-base Breakdown
Voltage (I
C
= 0)
I
E
= 10
A
4.5
V
V
CE (s at )
*
Collector-emitter Saturation
Voltage
I
C
= 10 mA
I
B
= 1 mA
0.2
0.25
V
V
BE (s at )
*
Base-emitter Saturation
Voltage
I
C
= 10 mA
I
B
= 1 mA
0.7
0.75
0.85
V
h
F E
*
DC Current Gain
I
C
= 10 mA
I
C
= 100 mA
I
C
= 10 mA
T
amb
= 55
C
V
CE
= 1 V
V
CE
= 2 V
V
CE
= 1 V
40
20
20
120
f
T
Transition Frequency
I
C
= 10 mA
f = 100 MHz
V
CE
= 10 V
500
650
MHz
C
CBO
Collector-base Capacitance
I
E
= 0
f = 1 MHz
V
CB
= 5 V
2.5
4
pF
t
s
Storage Time
I
C
= 10 mA
I
B1
=
V
CC
= 10 V
I
B2
= 10 mA
6
13
ns
t
o n
Turn-on Time
I
C
= 10 mA
I
B1
= 3 mA
V
CC
= 3 V
9
12
ns
t
o f f
Turn-off Time
I
C
= 10 mA
I
B1
= 3 mA
V
CC
= 3 V
I
B 2
= 1.5 mA
13
18
ns
* Pulsed : pulse duration = 300
s, duty cycle = 1 %.
THERMAL DATA
R
t h j- cas e
R
t h j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
146
486
C/W
C/W
2N2369
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
12.7
0.500
B
0.49
0.019
D
5.3
0.208
E
4.9
0.193
F
5.8
0.228
G
2.54
0.100
H
1.2
0.047
I
1.16
0.045
L
45
o
45
o
L
G
I
D
A
F
E
B
H
C
TO-18 MECHANICAL DATA
0016043
2N2369
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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