2N3019
HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS
DESCRIPTION
The 2N3019 is a silicon planar epitaxial NPN
transistors in Jedec TO-39 metal case, designed
for high-current, high frequency amplifier
application. It feature high gain and low saturation
voltage.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
140
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
80
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
1
A
P
tot
Total Dissipation at T
amb
25
o
C
at T
ca se
25
o
C
0.8
5
W
W
T
stg
Storage Temperature
-65 to 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
TO-39
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THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
35
219
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 90 V
V
CB
= 90 V T
ca se
= 150
o
C
10
10
nA
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
10
nA
V
(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
I
C
= 100
A
140
V
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= 10 mA
80
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 100
A
7
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA
0.2
0.5
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 150 mA I
B
= 15 mA
1.1
V
h
FE
DC Current Gain
I
C
= 0.1 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V
I
C
= 150 mA V
CE
= 10 V
I
C
= 500 mA V
CE
= 10 V
I
C
= 1A V
CE
= 10 V
I
C
= 150 mA V
CE
= 10 V
T
amb
= -55
o
C
50
90
100
50
15
40
300
h
fe
Small Signal Current
Gain
I
C
= 1 mA V
CE
= 5 V f = 1KHz
80
400
f
T
Transition Frequency
I
C
= 50 mA V
CE
= 10 V f = 20MHz
100
MHz
C
CBO
Collector Base
Capacitance
I
E
= 0 V
CB
= 10 V f = 1MHz
12
pF
C
EBO
Emitter Base
Capacitance
I
C
= 0 V
EB
= 0.5 V f = 1MHz
60
pF
NF
Noise Figure
I
C
= 0.1 mA V
CE
= 10 V
f = 1KHz R
g
= 1K
4
dB
r
bb'
C
b'c
Feedback
Time
Constant
I
C
= 10 mA V
CE
= 10 V f = 4MHz
400
ps
Pulsed: Pulse duration = 300
s, duty cycle
1 %
2N3019
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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2N3019
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