2N4033
GENERAL PURPOSE AMPLIFIER AND SWITCH
DESCRIPTION
The 2N4033 is a silicon planar epitaxial PNP
transistors in Jedec TO-39 metal case primary
intended for large signal, low noise industrial
applications.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collect or-Base Voltage (I
E
= 0)
-80
V
V
CEO
Collect or-Emitt er Voltage (I
B
= 0)
-80
V
V
EBO
Emitt er-Base Voltage (I
C
= 0)
-5
V
I
C
Collect or Current
-1
A
P
t ot
Total Dissipation at T
amb
45
o
C
at T
case
45
o
C
0.8
4
W
W
T
stg
St orage Temperature
-55 t o 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
TO-39
1/6
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
44
218
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CBO
Collect or Cut-off
Current (I
E
= 0)
V
CE
= -60 V
V
CE
= -60 V
T
amb
= 150
o
C
-50
-50
nA
A
V
( BR)CBO
Collect or-Base
Breakdown Volt age
(I
E
= 0)
I
C
= -10
A
-80
V
V
( BR)CEO
Collect or-Emitter
Breakdown Volt age
(I
B
= 0)
I
C
= -10 mA
-80
V
V
(BR)EBO
Emitt er-Base
Breakdown Volt age
(I
C
= 0)
I
E
= -10
A
-5
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= -150 mA
I
B
= -15 mA
I
C
= -500 mA
I
B
= -50 mA
-0.15
-0.5
V
V
V
BE(s at)
Base-Emitt er
Saturat ion Voltage
I
C
= -150 mA
I
B
= -15 mA
I
C
= -500 mA
I
B
= -50 mA
-0.9
-1.1
V
V
h
FE
DC Current G ain
I
C
= -100
A
V
CE
= -5 V
I
C
= -100 mA
V
CE
= -5 V
I
C
= -500 mA
V
CE
= -5 V
I
C
= -1 A
V
CE
= -5 V
I
C
= -100 mA
V
CE
= -5 V
T
am b
= -55
o
C
75
100
70
25
40
300
f
T
Transit ion F requency
I
C
= -50 mA
V
CE
= -10 V
f = 100 MHz
150
500
MHz
C
EBO
Emitt er Base
Capacitance
I
E
= 0
V
EB
= -0.5 V
f = 1MHz
110
pF
C
CBO
Collect or Base
Capacitance
I
E
= 0
V
CB
= -10 V
f = 1MHz
20
pF
t
s
St orage Time
I
C
= -500 mA
V
CE
= -30 V
I
B1
= -I
B2
= -50 mA
350
ns
t
f
Fall T ime
I
C
= -500 mA
V
CE
= -30 V
I
B1
= -I
B2
= -50 mA
50
ns
t
on
Turn-on T ime
I
C
= -500 mA
V
CE
= -30 V
I
B1
= -I
B2
= -50 mA
100
ns
Pulsed: Pulse duration = 300
s, duty cycle
1 %
See Test Circuit
2N4033
2/6
Collector-emitter Saturation Voltage.
Base-emitter Saturation Voltage.
Transition Frequency.
Collector-base Capacitance.
2N4033
3/6
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