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2N5886
HIGH CURRENT SILICON NPN POWER TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
HIGH CURRENT CAPABILITY
APPLICATIONS
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5886 is a silicon Epitaxial-Base NPN
power transistor mounted in Jedec TO-3 metal
case. It is inteded for use in power linear
amplifiers and switching applications.
INTERNAL SCHEMATIC DIAGRAM
January 2000
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
80
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
80
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
25
A
I
CM
Collector Peak Current
50
A
I
B
Base Current
7.5
A
P
tot
Total Dissipation at T
c
25
o
C
200
W
T
stg
Storage Temperature
-65 to 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
0.875
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= 80 V
V
CE
= 80 V T
c
= 150
o
C
1
10
mA
mA
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 80 V
1
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 40 V
2
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 200 mA
80
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 15 A I
B
= 1.5 A
I
C
= 25 A I
B
= 6.25 A
1
4
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 25 A I
B
= 6.25 A
2.5
V
V
BE
Base-Emitter Voltage
I
C
= 10 A V
CE
= 4 V
1.5
V
h
FE
DC Current Gain
I
C
= 3 A V
CE
= 4 V
I
C
= 10 A V
CE
= 4 V
I
C
= 25 A V
CE
= 4 V
35
20
4
100
h
fe
Small Signal Current
Gain
I
C
= 3 A V
CE
= 4 V f = 1KHz
20
f
T
Transition frequency
I
C
= 1 A V
CE
= 10 V f =1 MHz
4
MHz
C
CBO
Collector Base
Capacitance
I
E
= 0 V
CB
= 10 V f = 1MHz
500
pF
t
r
t
s
t
f
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
I
C
= 10 A V
CC
= 30 V
I
B1
= -I
B2
= 1A
0.7
1
0.8
s
s
s
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
2N5886
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.00
13.10
0.433
0.516
B
0.97
1.15
0.038
0.045
C
1.50
1.65
0.059
0.065
D
8.32
8.92
0.327
0.351
E
19.00
20.00
0.748
0.787
G
10.70
11.10
0.421
0.437
N
16.50
17.20
0.649
0.677
P
25.00
26.00
0.984
1.023
R
4.00
4.09
0.157
0.161
U
38.50
39.30
1.515
1.547
V
30.00
30.30
1.187
1.193
E
B
R
C
D
A
P
G
N
V
U
O
P003F
TO-3 MECHANICAL DATA
2N5886
3/4
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2N5886
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