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Электронный компонент: 2N6668

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2N6668
SILICON PNP POWER DARLINGTON TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
PNP DARLINGTON
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS:
s
GENERAL PURPOSE SWITCHING
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
INTERNAL SCHEMATIC DIAGRAM
July 1997
R1(typ) = 8 k
R2(typ) = 120
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
80
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
80
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
10
A
I
CM
Collector Peak Current
15
A
I
B
Base Current
250
mA
P
tot
Total Dissipation at T
c
25
o
C
65
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
For PNP type voltage and current values are negative.
1
2
3
TO-220
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THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.92
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 80 V
1
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
5
mA
I
CEV
Collector Cut-off
Current (V
EB
= -1.5V)
V
CE
= 80 V
300
A
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
=0)
I
C
= 200 mA
80
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 5 A I
B
= 0.01 A
I
C
= 10 A I
B
= 0.1 A
2
3
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 5 A I
B
= 0.01 A
I
C
= 10 A I
B
= 0.1 A
2.8
4.5
V
V
h
FE
DC Current Gain
I
C
= 5 A V
CE
= 3 V
I
C
= 10 A V
CE
= 3 V
1000
100
20000
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
For PNP type voltage and current values are negative.
2N6668
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
TO-220 MECHANICAL DATA
2N6668
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
2N6668
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