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February 2002
s
3.6V TOLERANT INPUTS AND OUTPUTS
s
HIGH SPEED:
t
PD
= 3.0ns (MAX.) at V
CC
= 3.0 to 3.6V
t
PD
= 3.7ns (MAX.) at V
CC
= 2.3 to 2.7V
s
POWER DOWN PROTECTION ON INPUTS
AND OUTPUTS
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 24mA (MIN) at V
CC
= 3V
|I
OH
| = I
OL
= 8mA (MIN) at V
CC
= 2.3V
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 1.65V to 3.6V
s
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 32245
s
BUS HOLD PROVIDED ON BOTH SIDE
s
LATCH-UP PERFORMANCE EXCEEDS
300mA
s
ESD PERFORMANCE:
HBM > 2000V (MIL STD 883 method 3015);
MM > 200V
DESCRIPTION
The 74ALVCH32245 is a low voltage CMOS
32-BIT BUS TRANSCEIVER (3-STATE)
fabricated with sub-micron silicon gate and
five-layer metal wiring C
2
MOS technology. It is
ideal for 1.65 to 3.6 V applications; it can be
interfaced to 3.6V signal enviroment for both
inputs and outputs.
This IC is intended for two-ways asynchronous
communication between data buses: the direction
of data trasmission is determined by DIR input.
Any nG contol output governs eight BUS
TRANSCEIVERS. Output Enable input (nG) tied
together gives full 32-bit operation. When nG is
LOW, the output are enabled. When nG is HIGH,
the output are in high impedance state so that the
buses are effectively isolated. Bus hold on data
inputs is provided in order to eliminate the need for
external pull-up or pull-down resistor.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
74ALVCH32245
LOW VOLTAGE CMOS 32-BIT BUS TRANSCEIVER
(3-STATE) WITH 3.6V TOLERANTAT INPUTS AND OUTPUTS
LOGIC DIAGRAM
ORDER CODES
PACKAGE
TRAY
T & R
LFBGA96
74ALVCH32245LB
74ALVCH32245LBR
LFBGA96
(Top and Bottom view)
74ALVCH32245
2/9
PIN CONNECTION (Top view)
TERMINAL ASSIGNMENT
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
X : Don`t Care
Z : High Impedance
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
6
1A2
1A4
1A6
1A8
2A2
2A4
2A6
2A7
3A2
3A4
3A6
3A8
4A2
4A4
4A6
4A7
5
1A1
1A3
1A5
1A7
2A1
2A3
2A5
2A8
3A1
3A3
3A5
3A7
4A1
4A3
4A5
4A8
4
1G
GND
V
CC
GND GND
V
CC
GND
2G
3G
GND
V
CC
GND GND
V
CC
GND
4G
3
1DIR GND
V
CC
GND GND
V
CC
GND 2DIR 3DIR GND
V
CC
GND GND
V
CC
GND 4DIR
2
1B1
1B3
1B5
1B7
2B1
2B3
2B5
2B8
3B1
3B3
3B5
3B7
4B1
4B3
4B5
4B8
1
1B2
1B4
1B6
1B8
2B2
2B4
2B6
2B7
3B2
3B4
3B6
3B8
4B2
4B4
4B6
4B7
SYMBOL
NAME AND FUNCTION
nDIR
Directional Control
nA1 to nA8
Data Inputs/Outputs
nB1 to nB8
Data Inputs/Outputs
nG
Output Enable Inputs
GND
Ground (0V)
V
CC
Positive Supply Voltage
INPUTS
FUNCTION
OUTPUT
nG
nDIR
A BUS
B BUS
Yn
L
L
OUTPUT
INPUT
A = B
L
H
INPUT
OUTPUT
B = A
H
X
Z
Z
Z
74ALVCH32245
3/9
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) I
O
absolute maximum rating must be observed
2) V
O
< GND
RECOMMENDED OPERATING CONDITIONS
1) Truth Table guaranteed: 1.2V to 3.6V
2) V
IN
from 0.8V to 2V at V
CC
= 3.0V
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +4.6
V
V
I
DC Input Voltage
-0.5 to +4.6
V
V
O
DC Output Voltage (V
CC
= 0V)
-0.5 to +4.6
V
V
O
DC Output Voltage (High or Low State) (note 1)
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
- 50
mA
I
OK
DC Output Diode Current (note 2)
- 50
mA
I
O
DC Output Current
50
mA
I
CC
or I
GND
DC V
CC
or Ground Current per Supply Pin
100
mA
P
D
Power Dissipation
400
mW
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage (note 1)
1.65 to 3.6
V
V
I
Input Voltage
0 to 3.6
V
V
O
Output Voltage (V
CC
= 0V)
0 to 3.6
V
V
O
Output Voltage (High or Low State)
0 to V
CC
V
I
OH
, I
OL
High or Low Level Output Current (V
CC
= 3.0 to 3.6V)
24
mA
I
OH
, I
OL
High or Low Level Output Current (V
CC
=2.7V)
12
mA
I
OH
, I
OL
High or Low Level Output Current (V
CC
= 2.3 to 2.5V)
8
mA
T
op
Operating Temperature
-40 to +85
C
dt/dv
Input Rise and Fall Time (note 2)
0 to 10
ns/V
74ALVCH32245
4/9
DC SPECIFICATIONS
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
-40 to 85 C
Min.
Max.
V
IH
High Level Input Voltage
1.65 to 1.95
0.65V
CC
V
2.3 to 2.7
1.7
2.7 to 3.6
2.0
V
IL
Low Level Input Voltage
1.65 to 1.95
0.35V
CC
V
2.3 to 2.7
0.7
2.7 to 3.6
0.8
V
OH
High Level Output Voltage
1.65 to 3.6
I
O
=-100
A
V
CC
-0.2
V
1.65
I
O
=-4 mA
1.2
2.3
I
O
=-8 mA
1.7
2.7
I
O
=-12 mA
2.2
3.0
I
O
=-12 mA
2.4
3.0
I
O
=-24 mA
2.2
V
OL
Low Level Output Voltage
1.65 to 3.6
I
O
=100
A
0.2
V
1.65
I
O
=4 mA
0.45
2.3
I
O
=8 mA
0.7
2.7
I
O
=12 mA
0.4
3.0
I
O
=12 mA
0.4
3.0
I
O
=24 mA
0.55
I
I
Input Leakage Current
3.6
V
I
= V
CC
or GND
5
A
I
I(HOLD)
Input Hold Current
1.65
V
I
= 0.58V
25
A
1.65
V
I
= 1.07V
-25
2.3
V
I
= 0.7V
45
2.3
V
I
= 1.7V
-45
3
V
I
= 0.8V
75
3
V
I
= 2V
-75
3.6
V
I
= 0 to 3.6V
500
I
OZ
High Impedance Output
Leakage Current
3.6
V
O
= V
CC
or GND
10
A
I
off
Power Off Leakage Current
0
V
I
or V
O
= 0 to 3.6V
20
A
I
CC
Quiescent Supply Current
3.6
V
I
= V
CC
or GND, I
O
= 0
40
A
I
CC
I
CC
incr. per Input
3.0 to 3.6
V
IH
= V
CC
-0.6V
other V
I
= V
CC
or GND
750
A
74ALVCH32245
5/9
AC ELECTRICAL CHARACTERISTICS
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/32 (per
circuit)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
C
L
(pF)
-40 to 85 C
Min.
Max.
t
PLH
t
PHL
Propagation Delay Time
2.3 to 2.7
30
1.0
3.7
ns
2.7
50
1.0
3.6
3.0 to 3.6
50
1.0
3.0
t
PZL
t
PZH
Output Enable Time
2.3 to 2.7
30
1.0
5.7
ns
2.7
50
1.0
5.4
3.0 to 3.6
50
1.0
4.4
t
PLZ
t
PHZ
Output Disable Time
2.3 to 2.7
30
1.0
5.2
ns
2.7
50
1.0
4.6
3.0 to 3.6
50
1.0
4.1
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25 C
Min.
Typ.
Max.
C
IN
Input Capacitance
3.3
V
I
= 0V or V
CC
4
pF
C
OUT
Output Capacitance
3.3
V
I
= 0V or V
CC
8
pF
C
PD
Power Dissipation Capacitance
(note 1)
2.5
f
IN
= 10MHz
V
I
= 0V or V
CC
22
pF
3.3
28
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