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Электронный компонент: 74LX1G132CTR

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1/11
April 2004
s
5V TOLERANT INPUTS
s
HIGH SPEED: t
PD
= 5.5ns (MAX.) at V
CC
= 3V
s
LOW POWER DISSIPATION:
I
CC
= 1
A (MAX.) at T
A
= 25C
s
TYPICAL HYSTERESIS: V
h
=1V at V
CC
=4.5V
s
POWER DOWN PROTECTION ON INPUTS
AND OUTPUTS
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 24mA (MIN) at V
CC
= 3V
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 1.65V to 5.5V
(1.2V Data Retention)
s
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74LX1G132 is a low voltage CMOS SINGLE
2-INPUT NAND GATE fabricated with sub-micron
silicon gate and double-layer metal wiring C
2
MOS
technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
This together with its schmitt trigger function
allows it to be used on line receivers with slow
rise/fall input signals.
All
inputs
and
outputs
are
equipped
with
protection circuits against static discharge.
74LX1G132
SINGLE 2-INPUT SCHMITT NAND GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE
T & R
SOT23-5L
74LX1G132STR
SOT323-5L
74LX1G132CTR
SOT323-5L
SOT23-5L
74LX1G132
2/11
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
1) I
O
maximum rating must be observed
2) V
O
< GND, V
O
> V
CC
PIN N
SYMBOL
NAME AND FUNCTION
1
1A
Data Input
2
1B
Data Input
4
1Y
Data Output
3
GND
Ground (0V)
5
V
CC
Positive Supply Voltage
A
B
Y
L
L
H
L
H
H
H
L
H
H
H
L
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage
-0.5 to +7.0
V
V
O
DC Output Voltage (V
CC
= 0V)
-0.5 to +7.0
V
V
O
DC Output Voltage (High or Low State) (note 1)
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
- 50
mA
I
OK
DC Output Diode Current (note 2)
- 50
mA
I
O
DC Output Current
50
mA
I
CC
or I
GND
DC V
CC
or Ground Current per Supply Pin
50
mA
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
74LX1G132
3/11
RECOMMENDED OPERATING CONDITIONS
1) Truth Table guaranteed: 1.2V to 3.6V
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage (note 1)
1.65 to 5.5
V
V
I
Input Voltage
0 to 5.5
V
V
O
Output Voltage (V
CC
= 0V)
0 to 5.5
V
V
O
Output Voltage (High or Low State)
0 to V
CC
V
I
OH
, I
OL
High or Low Level Output Current (V
CC
= 4.5 to 5.5V)
32
mA
I
OH
, I
OL
High or Low Level Output Current (V
CC
= 3.0 to 3.6V)
24
mA
I
OH
, I
OL
High or Low Level Output Current (V
CC
= 2.7 to 3.0V)
12
mA
I
OH
, I
OL
High or Low Level Output Current (V
CC
= 2.3 to 2.7V)
8
mA
I
OH
, I
OL
High or Low Level Output Current (V
CC
= 1.65 to 2.3V)
4
mA
T
op
Operating Temperature
-55 to 125
C
74LX1G132
4/11
DC SPECIFICATIONS
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
-40 to 85 C
-55 to 125 C
Min.
Max.
Min.
Max.
V
T+
Positive Input
threshold
1.65
0.79
1.16
0.79
1.16
V
2.3
1.11
1.56
1.11
1.56
3
1.5
1.87
1.5
1.87
4.5
2.16
2.74
2.16
2.74
5.5
2.61
3.33
2.61
3.33
V
T-
Negative Input
threshold
1.65
0.39
0.62
0.39
0.62
V
2.3
0.58
0.87
0.58
0.87
3
0.84
1.14
0.84
1.14
4.5
1.41
1.79
1.41
1.79
5.5
1.87
2.29
1.87
2.29
V
H
Hysteresis Voltage
1.65
0.37
0.62
0.37
0.62
V
2.3
0.48
0.77
0.48
0.77
3
0.56
0.87
0.56
0.87
4.5
0.71
1.04
0.71
1.04
5.5
0.71
1.11
0.71
1.11
V
OH
High Level Output
Voltage
1.65 to 4.5
I
O
=-100
A
V
CC
-0.1
V
CC
-0.1
V
1.65
I
O
=-4 mA
1.2
1.2
2.3
I
O
=-8 mA
1.9
1.9
3.0
I
O
=-16 mA
2.4
2.4
I
O
=-24 mA
2.2
2.2
4.5
I
O
=-32 mA
3.8
3.8
V
OL
Low Level Output
Voltage
1.65 to 4.5
I
O
=100
A
0.1
0.1
V
1.65
I
O
=4 mA
0.45
0.45
2.3
I
O
=8 mA
0.3
0.3
3.0
I
O
=16 mA
0.4
0.4
I
O
=24 mA
0.55
0.55
4.5
I
O
=32 mA
0.55
0.55
I
I
Input Leakage
Current
1.65 to 5.5
V
I
= 0 to 5.5V
10
10
A
I
off
Power Off Leakage
Current
0
V
I
or V
O
= 5.5V
10
10
A
I
CC
Quiescent Supply
Current
1.65 to 5.5
V
I
= V
CC
or GND
10
10
A
74LX1G132
5/11
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3ns)
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
C
L
(pF)
R
L
(
)
t
s
= t
r
(ns)
-40 to 85 C
-55 to 125 C
Min.
Max.
Min.
Max.
t
PLH
t
PHL
Propagation Delay
Time
1.65 to 1.95
15
1M
3.0
2
12.0
2
12.0
ns
2.3 to 2.7
2
7.0
2
7.0
3.0 to 3.6
1
6.0
1
6.0
4.5 to 5.5
1
5.5
1
5.5
1.65 to 1.95
30
1000
2.0
2
11.0
2
11.0
2.3 to 2.7
30
500
2.0
2
6.5
2
6.5
2.7
50
500
2.5
1
6.5
1
6.5
3.0 to 3.6
50
500
2.5
1
5.5
1
5.5
4.5 to 5.5
50
500
2.5
1
5.0
1
5.0
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25 C
Min.
Typ.
Max.
C
IN
Input Capacitance
0
5
pF
C
PD
Power Dissipation Capacitance
(note 1)
1.8
f
IN
= 10MHz
20
pF
2.5
21
3.3
22