74V1T14
SINGLE SCHMITT INVERTER
October 1999
s
HIGH SPEED: t
PD
= 4.7 ns (TYP.) at V
CC
= 5V
s
LOW POWER DISSIPATION:
I
CC
= 1
A (MAX.) at T
A
= 25
o
C
s
TYPICAL HYSTERESIS: V
h
=0.7V AT V
CC
=4.5V
s
POWER DOWN PROTECTION ON INPUT
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8 mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
s
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1T14 is an advanced high-speed CMOS
SINGLE SCHMITT INVERTER fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on input and 0
to 7V can be accepted on input with no regard to
the supply voltage. This device can be used to
interface 5V to 3V.
Pin configuration and function are the same as
those of
the V1G04 but
the
V1G14 has
hysteresis.
The schmitt trigger function allows it to be used
on line receivers with slow rise/fall input signals.
PIN CONNECTION AND IEC LOGIC SYMBOLS
S
(SOT23-5L)
C
(SC-70)
ORDER CODE:
74V1T14S
74V1T14C
1/7
INPUT EQUIVALENT CIRCUIT
TRUTH TABLE
A
Y
L
H
H
L
PIN DESCRIPTION
PI N No
SYMBOL
NAME AND FUNCT ION
1
N.C.
Not Connected
2
1A
Data Input
4
1Y
Data Output
3
GND
Ground (0V)
5
V
CC
Positive Supply Voltage
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage
-0.5 to +7.0
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
- 20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
T
stg
Storage Temperature
-65 to +150
o
C
T
L
Lead Temperature (10 sec)
260
o
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Valu e
Uni t
V
CC
Supply Voltage
4.5 to 5.5
V
V
I
Input Voltage
0 to 5.5
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-40 to +85
o
C
74V1T14
2/7
DC SPECIFICATIONS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
V
CC
(V)
T
A
= 25
o
C
-40 to 85
o
C
Min.
Typ .
Max.
Min .
Max.
V
t+
High Level Input
Voltage
4.5
2.0
2.0
V
5.5
2.0
2.0
V
t-
Low Level Input
Voltage
4.5
0.6
0.6
V
5.5
0.6
0.6
V
h
Hysteresis Voltage
4.5
0.4
1.4
0.4
1.4
V
5.5
0.4
1.5
0.4
1.5
V
OH
High Level Output
Voltage
4.5
I
O
=-50
A
4.4
4.5
4.4
V
4.5
I
O
=-8 mA
3.94
3.8
V
OL
Low Level Output
Voltage
4.5
I
O
=50
A
0.0
0.1
0.1
V
4.5
I
O
=8 mA
0.36
0.44
I
I
Input Leakage Current
0 to 5.5
V
I
= 5.5V or GND
0.1
1.0
A
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
1
10
A
I
CC
Additional Worst Case
Supply Current
5.5
One Input at 3.4V,
other input at V
CC
or
GND
1.35
1.5
mA
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
T
A
= 25
o
C
-40 to 85
o
C
Min.
Typ .
Max.
Min .
Max.
C
IN
Input Capacitance
4
10
10
pF
C
PD
Power Dissipation
Capacitance (note 1)
12
pF
1) C
PD
isdefined as the value of the IC'sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. I
CC
(opr) = C
PD
V
CC
f
IN
+ I
CC
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
=3 ns)
Symb ol
Parameter
Test Co nditi on
Val ue
Un it
V
CC
(*)
(V)
CL
(pF )
T
A
= 25
o
C
-40 to 85
o
C
Min.
Typ .
Max.
Min .
Max.
t
PLH
t
PHL
Propagation Delay
Time
5.0
15
5.0
7.5
1.0
9.0
ns
5.0
50
6.5
8.5
1.0
10.0
(*) Voltage range is 5V
0.5V
74V1T14
3/7
TEST CIRCUIT
C
L
= 15/50 pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50
)
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
74V1T14
4/7
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