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November 2001
s
HIGH SPEED: t
PD
= 3.0ns (TYP.) at V
CC
= 5V
s
LOW POWER DISSIPATION:
I
CC
= 1
A(MAX.) at T
A
=25C
s
TYPICAL HYSTERESIS:
V
H
= 800mV
at V
CC
= 4.5V
V
H
= 500mV
at V
CC
= 3.0V
s
POWER DOWN PROTECTION ON INPUTS
AND OUTPUTS
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8mA (MIN) at V
CC
= 4.5V
II
OH
| = I
OL
= 4mA (MIN) at V
CC
= 3.0V
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
s
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2G132 is an advanced high-speed CMOS
SINGLE 2-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS tecnology.
Pin configuration and function are the same as
those of the 74V2G00 but the 74V2G132 has
hysteresis.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
74V2G132
DUAL 2-INPUT SHMITT TRIGGER NAND GATE
This is preliminary information on a new product now in development are or undergoing evaluation. Details subject to change without notice.
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE
T & R
SOT23-8L
74V2G132STR
SOT323-8L
74V2G132CTR
SOT23-8L
SOT323-8L
PRELIMINARY DATA
74V2G132
2/9
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Rating are those value beyond which damage to the device may occour. Functional operation under these condition is
not implied
RECOMMENDED OPERATING CONDITIONS
PIN No
SYMBOL
NAME QND FUNCTION
1, 5
1A, 2A
Data Input
2, 6
1B, 2B
Data Input
7, 3
1Y, 2Y
Data Output
4
GND
Ground (0V)
8
V
CC
Positive Supply Voltage
A
B
Y
L
L
H
L
H
H
H
L
H
H
H
L
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage
-0.5 to +7.0
V
V
O
DC Output Voltage (see note 1)
-0.5 to +7.0
V
V
O
DC Output Voltage (see note 2)
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
-
20
mA
I
OK
DC Output Diode Current
-
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
260
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
2 to 5.5
V
V
I
Input Voltage
0 to 5.5
V
V
O
Output Voltage
0 to 5.5
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
74V2G132
3/9
DC SPECIFICATION
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3ns)
(*) Voltage range is 3.3V
0.3V
(**) Voltage range is 5.0V
0.5V
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
P
High Level Input
Voltage
3.0
2.20
2.20
2.20
V
4.5
3.15
3.15
3.15
5.5
3.85
3.85
3.85
V
N
Low Level Input
Voltage
3.0
0.90
0.90
0.90
V
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
V
H
Hysteresis Voltage
3.0
0.30
0..5
1.20
0.30
1.20
0.30
1.20
V
4.5
0.40
0.8
1.40
0.40
1.40
0.40
1.40
5.5
0.50
1.0
1.60
0.50
1.60
0.50
1.60
V
OH
High Level Ouput
Voltage
2.0
I
O
=-50
A
1.9
2.0
1.9
1.9
V
3.0
I
O
=-50
A
2.9
3.0
2.9
2.9
4.5
I
O
=-50
A
4.4
4.5
4.4
4.4
3.0
I
O
=-4 mA
2.58
2.48
2.4
4.5
I
O
=-8 mA
3.94
3.8
3.7
V
OL
Low Level Output
Voltage
2.0
I
O
=50
A
0.0
0.1
0.1
0.1
V
3.0
I
O
=50
A
0.0
0.1
0.1
0.1
4.5
I
O
=50
A
0.0
0.1
0.1
0.1
3.0
I
O
=4 mA
0.36
0.44
0.55
4.5
I
O
=8 mA
0.36
0.44
0.55
I
I
Input Leakage
Current
0 to
5.5
V
I
= 5.5V or GND
0.1
1
1
A
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
1
10
20
A
I
OPD
Power down Output
Leakage Current
0
V
O
= 5.5
0.5
5
10
A
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
PLH
t
PHL
Propagation Delay
Time
3.3
(*)
15
5.5
7.9
1.0
9.5
1.0
9.5
ns
3.3
(*)
50
8.0
11.4
1.0
13.0
1.0
13.0
5.0
(**)
15
3.7
5.5
1.0
6.5
1.0
6.5
5.0
(**)
50
5.2
7.5
1.0
8.5
1.0
8.5
74V2G132
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CAPACITANCE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivqlent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current cqn be obtqined by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
L
= R
1
= 500
or equivalent
R
T
= Z
OUT
of pulse generator (typically 50
)
WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)
Symbol
Parameter
Test Condition
Value
Unit
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
4
10
10
10
pF
C
PD
Power Dissipation
Capacitance
(note 1)
19
pF
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