1/9
December 2001
s
HIGH SPEED: t
PD
= 4.6ns (TYP.) at V
CC
= 5V
s
LOW POWER DISSIPATION:
I
CC
= 1
A(MAX.) at T
A
=25C
s
COMPATIBLE WITH TTL OUTPUTS:
V
IH
= 2V (MIN), V
IL
= 0.8V (MAX)
s
POWER DOWN PROTECTION ON INPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
s
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2T32 is an advanced high-speed CMOS
DUAL 2-INPUT OR GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS tecnology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage.
This device can be used to interface 5V to 3V
systems and it is ideal for portable applications
like personal digital assistant and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.
74V2T32
DUAL 2-INPUT OR GATE
This is preliminary information on a new product now in development are or undergoing evaluation. Details subject to change without notice.
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE
T & R
SOT23-8L
74V2T08STR
SOT323-8L
74V2T08CTR
SOT23-8L
SOT323-8L
PRELIMINARY DATA
74V2T32
2/9
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occour. Functional operation under these condition is
not implied
RECOMMENDED OPERATING CONDITIONS
1) V
IN
from 0.8V to 2V
PIN No
SYMBOL
NAME QND FUNCTION
1, 5
1A, 2A
Data Input
2, 6
1B, 2B
Data Input
7, 3
1Y, 2Y
Data Output
4
GND
Ground (0V)
8
V
CC
Positive Supply Voltage
nA
nB
nY
L
L
L
L
H
H
H
L
H
H
H
H
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage
-0.5 to +7.0
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
- 20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
4.5 to 5.5
V
V
I
Input Voltage
0 to 5.5
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperqture
-55 to 125
C
dt/dv
Input Rise and Fall Time (note 1) (V
CC
= 5.0
0.5V)
0 to 20
ns/V
74V2T32
3/9
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3ns)
(*) Voltage range is 5.0V
0.5V
CAPACITANCE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivqlent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current cqn be obtqined by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/2
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
4.5 to
5.5
2
2
2
V
V
IL
Low Level Input
Voltage
4.5 to
5.5
0.8
0.8
0.8
V
V
OH
High Level Ouput
Voltage
4.5
I
O
=-50
A
4.4
4.5
4.4
4.4
V
4.5
I
O
=-8 mA
3.94
3.8
3.7
V
OL
Low Level Output
Voltage
4.5
I
O
=50
A
0.0
0.1
0.1
0.1
V
4.5
I
O
=8 mA
0.36
0.44
0.55
I
I
Input Leakage
Current
0 to
5.5
V
I
= 5.5V or GND
0.1
1.0
1.0
A
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
1
10
20
A
I
CC
Additional Worst
Case Supply
Current
5.5
One Input at 3.4V,
other input at V
CC
or GND
1.35
1.5
1.5
mA
I
OPD
Output Leakage
Current
0
V
OUT
= 5.5V
0.5
5.0
5.0
A
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
PLH
t
PHL
Propagation Delay
Time
5.0 (*)
15
4.6
7.0
1.0
8.0
1.0
9.0
ns
5.0 (*)
50
5.1
7.5
1.0
8.5
1.0
9.5
Symbol
Parameter
Test Condition
Value
Unit
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
4
10
10
10
pF
C
PD
Power Dissipation
Capacitance
(note 1)
12
pF
74V2T32
4/9
DYNAMIC SWITCHING CHARACTERISTICS
1) Number of output defined as "n". Measured with "n-1" outputs switching from HIGH to LOW or LOW to HIGH. The remaining outputs is
measured in the LOW state.
TEST CIRCUIT
C
L
= 15/50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50
)
WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25 C
Min.
Max.
V
OLP
Dynamic Low Level Quiet Out-
put (note 1)
5.0
C
L
= 50pF
V
IL
= 0V, V
IH
= 3.3V
0.8
V
V
OLV
-0.8
74V2T32
5/9
DIM.
mm.
mils
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
0.90
1.45
35.4
57.1
A1
0.00
0.15
0.0
5.9
A2
0.90
1.30
35.4
51.2
b
0.22
0.38
8.6
14.9
C
0.09
0.20
3.5
7.8
D
2.80
3.00
110.2
118.1
E
2.60
3.00
102.3
118.1
E1
1.50
1.75
59.0
68.8
e
0
.65
25.6
e1
1.95
76.7
L
0.35
0.55
13.7
21.6
SOT23-8L MECHANICAL DATA
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