1/10
February 2003
s
HIGH SPEED:
t
PD
= 5.4 ns (TYP.) at V
CC
= 5V
s
LOW POWER DISSIPATION:
I
CC
= 4
A (MAX.) at T
A
=25C
s
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
s
POWER DOWN PROTECTION ON INPUTS
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8 mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
s
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 16244
s
IMPROVED LATCH-UP IMMUNITY
s
LOW NOISE: V
OLP
= 0.9V (MAX.)
DESCRIPTION
The 74VHC16244 is an advanced high-speed
CMOS 16-BIT BUS BUFFER (3-STATE) fabricat-
ed with sub-micron silicon gate and double-layer
metal wiring C
2
MOS tecnology.
Any
nG
output
control
governs
four
BUS
BUFFERS.
Output
Enable
inputs
(nG)
tied
together give full 16 bit operation.
When nG is LOW, the outputs are enabled. When
nG is HIGH, the output are in high impedance
state.
The device is designed to be used with 3-state
memory address drivers, etc.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no re-
gard to the supply voltage. This device can be
used to interface 5V to 3V.
All inputs and outputs are equipped with protec-
tion circuits against static discharge, giving them
2KV ESD immunity and transient excess voltage.
74VHC16244
16-BIT BUS BUFFER
WITH 3-STATE OUTPUTS (NON INVERTED)
ORDER CODES
PACKAGE
TUBE
T & R
TSSOP
74VHC16244TTR
TSSOP
PIN CONNECTION
74VHC16244
2/10
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
X : Don't Care
Z : High Impedance
IEC LOGIC SYMBOLS
PIN No
SYMBOL
NAME AND FUNCTION
1
1G
Output Enable Input
2, 3, 5, 6
1Y1 to 1Y4 Data Outputs
8, 9, 11, 12
2Y1 to 2Y4 Data Outputs
13, 14, 16, 17
3Y1 to 3Y4 Data Outputs
19, 20, 22, 23
4Y1 to 4Y4 Data Outputs
24
4G
Output Enable Input
25
3G
Output Enable Input
30, 29, 27, 26
4A1 to 4A4 Data Outputs
36, 35, 33, 32
3A1 to 3A4 Data Outputs
41, 40, 38, 37
2A1 to 2A4 Data Outputs
47, 46, 44, 43
1A1 to 1A4 Data Outputs
48
2G
Output Enable Input
4, 10, 15, 21,
28, 34, 39, 45
GND
Ground (0V)
7, 18, 31, 42
V
CC
Positive Supply Voltage
INPUTS
OUTPUT
G
An
Yn
L
L
L
L
H
H
H
X
Z
74VHC16244
3/10
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
RECOMMENDED OPERATING CONDITIONS
1) V
IN
from 30% to 70% of V
CC
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage
-0.5 to +7.0
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
- 20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
75
mA
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
2 to 5.5
V
V
I
Input Voltage
0 to 5.5
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
dt/dv
Input Rise and Fall Time (note 1) (V
CC
= 3.3
0.3V)
(V
CC
= 5.0
0.5V)
0 to 100
0 to 20
ns/V
74VHC16244
4/10
DC SPECIFICATIONS
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
2.0
1.5
1.5
1.5
V
3.0 to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
V
IL
Low Level Input
Voltage
2.0
0.5
0.5
0.5
V
3.0 to
5.5
0.3V
CC
0.3V
CC
0.3V
CC
V
OH
High Level Output
Voltage
2.0
I
O
=-50
A
1.9
2.0
1.9
1.9
V
3.0
I
O
=-50
A
2.9
3.0
2.9
2.9
4.5
I
O
=-50
A
4.4
4.5
4.4
4.4
3.0
I
O
=-4 mA
2.58
2.48
2.4
4.5
I
O
=-8 mA
3.94
3.8
3.7
V
OL
Low Level Output
Voltage
2.0
I
O
=50
A
0.0
0.1
0.1
0.1
V
3.0
I
O
=50
A
0.0
0.1
0.1
0.1
4.5
I
O
=50
A
0.0
0.1
0.1
0.1
3.0
I
O
=4 mA
0.36
0.44
0.55
4.5
I
O
=8 mA
0.36
0.44
0.55
I
OZ
High Impedance
Output Leakage
Current
5.5
V
I
= V
IH
or V
IL
V
O
= V
CC
or GND
0.25
2.5
5
A
I
I
Input Leakage
Current
0 to
5.5
V
I
= 5.5V or GND
0.1
1
1
A
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
4
40
40
A
74VHC16244
5/10
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3ns)
(*) Voltage range is 3.3V
0.3V
(**) Voltage range is 5.0V
0.5V
Note 1 : Parameter guaranteed by design. t
soLH
= |t
pLHm
- t
pLHn
|, t
soHL
= |t
pHLm
- t
pHLn
|
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/ 16(per
Latch)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
PLH
t
PHL
Propagation Delay
Time
3.3
(*)
15
5.3
8.4
1.0
10.0
1.0
10.0
ns
3.3
(*)
50
7.8
11.9
1.0
13.5
1.0
13.5
5.0
(**)
15
3.6
6.0
1.0
6.5
1.0
7.0
5.0
(**)
50
5.4
8.0
1.0
8.5
1.0
9.0
t
PZL
t
PZH
Output Enable
Time
3.3
(*)
15
R
L
= 1K
6.6
10.6
1.0
12.5
1.0
12.5
ns
3.3
(*)
50
R
L
= 1K
9.1
14.1
1.0
16.0
1.0
16.0
5.0
(**)
15
R
L
= 1K
4.7
7.3
1.0
8.5
1.0
8.5
5.0
(**)
50
R
L
= 1K
6.2
9.3
1.0
10.5
1.0
10.5
t
PLZ
t
PHZ
Output Disable
Time
3.3
(*)
50
R
L
= 1K
10.3
14.0
1.0
16.0
1.0
16.0
ns
5.0
(**)
50
R
L
= 1K
6.7
9.2
1.0
10.5
1.0
10.5
t
OSLH
t
OSHL
Output to Output
Skew time (note 1)
3.3
(*)
50
1.5
1.5
1.5
ns
5.0
(**)
50
1.0
1.0
1.0
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
6
10
10
10
pF
C
OUT
Output
Capacitance
8
pF
C
PD
Power Dissipation
Capacitance
(note 1)
5.0
f
IN
= 10MHz
20
pF
PDF 
ZIP