74VHC174
HEX D-TYPE FLIP FLOP WITH CLEAR
PRELIMINARY DATA
June 1999
s
HIGH SPEED:
f
MAX
=175 MHz (TYP.) at V
CC
= 5V
s
LOW POWER DISSIPATION:
I
CC
= 4
A (MAX.) at T
A
= 25
o
C
s
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
s
POWER DOWN PROTECTION ON INPUTS
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8 mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
s
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 174
s
IMPROVED LATCH-UP IMMUNITY
s
LOW NOISE: V
OLP
= 0.8V (Max.)
DESCRIPTION
The 74VHC174 is an advanced high-speed
CMOS HEX D-TYPE FLIP FLOP WITH CLEAR
fabricated with sub-micron silicon gate and
double-layer metal wiring C
2
MOS technology.
Information signals applied to D inputs are
transfered to the Q outputs on the positive going
edge of the clock pulse.
When the CLEAR input is held low, the Q outputs
are held low independently of the other inputs.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
All inputs
and
outputs are
equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
M
(Micro Package)
T
(TSSOP Package)
ORDER CODES :
74VHC174M
74VHC174T
1/10
INPUT EQUIVALENT CIRCUIT
LOGIC DIAGRAM
PIN DESCRIPTION
PIN No
SYMBOL
NAME AND FUNCT ION
1
CLEAR
Asyncronous Master Reset
(Active LOW)
2, 5, 7, 10,
12, 15
Q0 to Q5
Flip-Flop Outputs
3, 4, 6, 11,
13, 14
D0 to D5
Data Inputs
9
CLOCK
Clock Input (LOW-to-HIGH,
Edge- Triggered)
8
GND
Ground (0V)
16
V
CC
Positive Supply Voltage
TRUTH TABLE
I NPUTS
OUT PUT S
F UNCTIO N
CL EAR
D
CLO CK
Q
L
X
X
L
CLEAR
H
L
L
H
H
H
H
X
Q
n
NO CHANGE
X:Don't Care
Thislogic diagram has notbe used to estimate propagation delays
74VHC174
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ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage
-0.5 to +7.0
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
- 20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
T
stg
Storage Temperature
-65 to +150
o
C
T
L
Lead Temperature (10 sec)
300
o
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Valu e
Uni t
V
CC
Supply Voltage
2.0 to 5.5
V
V
I
Input Voltage
0 to 5.5
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-40 to +85
o
C
dt/dv
Input Rise and Fall Time (see note 1) (V
CC
= 3.3
0.3V)
(V
CC
= 5.0
0.5V)
0 to 100
0 to 20
ns/V
ns/V
1) V
IN
from 30% to70%of V
CC
DC SPECIFICATIONS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
V
CC
(V)
T
A
= 25
o
C
-40 to 85
o
C
Min.
Typ .
Max.
Min .
Max.
V
IH
High Level Input Voltage
2.0
1.5
1.5
V
3.0 to 5.5
0.7V
CC
0.7V
CC
V
IL
Low Level Input Voltage
2.0
0.5
0.5
V
3.0 to 5.5
0.3V
CC
0.3V
CC
V
OH
High Level Output
Voltage
2.0
I
O
=-50
A
1.9
2.0
1.9
V
3.0
I
O
=-50
A
2.9
3.0
2.9
4.5
I
O
=-50
A
4.4
4.5
4.4
3.0
I
O
=-4 mA
2.58
2.48
4.5
I
O
=-8 mA
3.94
3.8
V
OL
Low Level Output
Voltage
2.0
I
O
=50
A
0.0
0.1
0.1
V
3.0
I
O
=50
A
0.0
0.1
0.1
4.5
I
O
=50
A
0.0
0.1
0.1
3.0
I
O
=4 mA
0.36
0.44
4.5
I
O
=8 mA
0.36
0.44
I
I
Input Leakage Current
0 to 5.5
V
I
= 5.5V or GND
0.1
1.0
A
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
4
40
A
74VHC174
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CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
T
A
= 25
o
C
-40 to 85
o
C
Min.
Typ .
Max.
Min .
Max.
C
IN
Input Capacitance
4
10
10
pF
C
PD
Power Dissipation
Capacitance (note 1)
29
pF
1) C
PD
isdefined as the value of the IC'sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. I
CC
(opr) = C
PD
V
CC
f
IN
+ I
CC
/6 (per Flip-Flop)
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
=3 ns)
Symb ol
Parameter
Test Co nditi on
Val ue
Un it
V
CC
(V)
C
L
(pF )
T
A
= 25
o
C
-40 to 85
o
C
Min.
Typ .
Max.
Min .
Max.
t
PLH
t
PHL
Propagation Delay Time
CK to Q
3.3
(*)
15
7.2
11.0
1.0
13.0
ns
3.3
(*)
50
9.7
14.5
1.0
16.5
5.0
(**)
15
4.9
7.2
1.0
8.5
5.0
(**)
50
6.4
9.2
1.0
10.5
t
PHL
Propagation Delay Time
CLR to Q
3.3
(*)
15
7.4
11.4
1.0
13.5
ns
3.3
(*)
50
9.9
14.9
1.0
17.0
5.0
(**)
15
5.1
7.6
1.0
9.0
5.0
(**)
50
6.6
9.6
1.0
11.0
t
w
CLR pulse Width
LOW
3.3
(*)
5.0
5.0
ns
5.0
(**)
5.0
5.0
t
w
CK pulse Width
HIGH r LOW
3.3
(*)
5.0
5.0
ns
5.0
(**)
5.0
5.0
t
s
Setup Time D to CK
HIGH or LOW
3.3
(*)
5.0
6.0
ns
5.0
(**)
4.5
4.5
t
h
Hold Time D to CK
HIGH or LOW
3.3
(*)
0.0
0.0
ns
5.0
(**)
0.5
0..5
t
REM
Removal Time
CLR to CK
3.3
(*)
3.0
3.0
ns
5.0
(**)
2.5
2.5
f
MAX
Maximum Clock
Frequency
3.3
(*)
15
95
150
80
MHz
3.3
(*)
50
55
85
50
5.0
(**)
15
130
175
110
5.0
(**)
50
90
120
80
(*) Voltage range is 3.3V
0.3V
(**) Voltage range is 5V
0.5V
74VHC174
4/10
DYNAMIC SWITCHING CHARACTERISTICS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
V
CC
(V)
T
A
= 25
o
C
-40 to 85
o
C
Min.
Typ .
Max.
Min .
Max.
V
OLP
Dynamic Low Voltage
Quiet Output (note 1, 2)
5.0
C
L
= 50 pF
0.3
0.8
V
V
OLV
-0.8
-0.3
V
IHD
Dynamic High Voltage
Input (note 1, 3)
5.0
3.5
V
IL D
Dynamic Low Voltage
Input (note 1, 3)
5.0
1.5
1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 5.0V, (n -1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to5.0V. Inputs under test switching: 5.0V to threshold (V
ILD
), 0V to threshold (V
IHD
), f=1MHz.
TEST CIRCUIT
C
L
= 15/50 pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50
)
74VHC174
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