1/9
June 2001
s
HIGH SPEED: t
PD
= 3.5 ns (TYP.) at V
CC
= 5V
s
LOW POWER DISSIPATION:
I
CC
= 4
A (MAX.) at T
A
=25C
s
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
s
POWER DOWN PROTECTION ON INPUTS
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8 mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
s
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 541
s
IMPROVED LATCH-UP IMMUNITY
s
LOW NOISE: V
OLP
= 0.9V (MAX.)
DESCRIPTION
The 74VHC541 is an advanced high-speed
CMOS OCTAL BUS BUFFER (3-STATE)
fabricated with sub-micron silicon gate and
double-layer metal wiring C
2
MOS technology.
The 3 STATE control gate operates as two input
AND such that if either G1 or G2 are high, all eight
outputs are in the high impedance state.
In order to enhance PC board layout, the
74VHC541 offers a pinout having inputs and
outputs on opposite sides of the package.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
74VHC541
OCTAL BUS BUFFER
WITH 3 STATE OUTPUTS (NON INVERTED)
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE
TUBE
T & R
SOP
74VHC541M
74VHC541MTR
TSSOP
74VHC541TTR
TSSOP
SOP
74VHC541
2/9
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
X : Don't care
Z : High impedance
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
RECOMMENDED OPERATING CONDITIONS
1) V
IN
from 30% to 70% of V
CC
PIN No
SYMBOL
NAME AND FUNCTION
1, 19
G1, G2
Output Enable Inputs
2, 3, 4, 5, 6,
7, 8, 9
A1 to A8
Data Inputs
18, 17, 16,
15, 14, 13,
12, 11
Y1 to Y8
Data Outputs
10
GND
Ground (0V)
20
V
CC
Positive Supply Voltage
INPUT
OUTPUT
G1
G2
An
Yn
H
X
X
Z
X
H
X
Z
L
L
H
H
L
L
L
L
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage
-0.5 to +7.0
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
- 20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
75
mA
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
2 to 5.5
V
V
I
Input Voltage
0 to 5.5
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
dt/dv
Input Rise and Fall Time (note 1) (V
CC
= 3.3
0.3V)
(V
CC
= 5.0
0.5V)
0 to 100
0 to 20
ns/V
74VHC541
3/9
DC SPECIFICATIONS
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
2.0
1.5
1.5
1.5
V
3.0 to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
V
IL
Low Level Input
Voltage
2.0
0.5
0.5
0.5
V
3.0 to
5.5
0.3V
CC
0.3V
CC
0.3V
CC
V
OH
High Level Output
Voltage
2.0
I
O
=-50
A
1.9
2.0
1.9
1.9
V
3.0
I
O
=-50
A
2.9
3.0
2.9
2.9
4.5
I
O
=-50
A
4.4
4.5
4.4
4.4
3.0
I
O
=-4 mA
2.58
2.48
2.4
4.5
I
O
=-8 mA
3.94
3.8
3.7
V
OL
Low Level Output
Voltage
2.0
I
O
=50
A
0.0
0.1
0.1
0.1
V
3.0
I
O
=50
A
0.0
0.1
0.1
0.1
4.5
I
O
=50
A
0.0
0.1
0.1
0.1
3.0
I
O
=4 mA
0.36
0.44
0.55
4.5
I
O
=8 mA
0.36
0.44
0.55
Ioz
High Impedance
Output Leakage
Current
5.5
V
I
= V
IH
or V
IL
V
O
= V
CC
or GND
0.25
2.5
2.5
A
I
I
Input Leakage
Current
0 to
5.5
V
I
= 5.5V or GND
0.1
1
1
A
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
4
40
40
A
74VHC541
4/9
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3ns)
(*) Voltage range is 3.3V
0.3V
(**) Voltage range is 5.0V
0.5V
Note 1 : Parameter guaranteed by design. t
soLH
= |t
pLHm
- t
pLHn
|, t
soHL
= |t
pHLm
- t
pHLn
|
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/8 (per
Circuit)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
PLH
t
PHL
Propagation Delay
Time
3.3
(*)
15
5.0
7.0
1.0
8.5
1.0
8.5
ns
3.3
(*)
50
7.5
10.5
1.0
12.0
1.0
12.0
5.0
(**)
15
3.5
5.0
1.0
6.0
1.0
6.0
5.0
(**)
50
5.0
7.0
1.0
8.0
1.0
8.0
t
PZL
t
PZH
Output Enable
Time
3.3
(*)
15
R
L
= 1K
6.8
10.5
1.0
12.5
1.0
12.5
ns
3.3
(*)
50
R
L
= 1K
9.3
14.0
1.0
16.0
1.0
16.0
5.0
(**)
15
R
L
= 1K
4.7
7.2
1.0
8.5
1.0
8.5
5.0
(**)
50
R
L
= 1K
6.2
9.2
1.0
10.5
1.0
10.5
t
PLZ
t
PHZ
Output Disable
Time
3.3
(*)
50
R
L
= 1K
11.2
15.4
1.0
17.5
1.0
17.5
ns
5.0
(**)
50
R
L
= 1K
6.0
8.8
1.0
10.0
1.0
10.0
t
OSLH
t
OSHL
Output to Output
Skew time (note 1)
3.3
(*)
50
1.5
1.5
1.5
ns
5.0
(**)
50
1.0
1.0
1.0
Symbol
Parameter
Test Condition
Value
Unit
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
7
10
10
10
pF
C
OUT
Output
Capacitance
9
pF
C
PD
Power Dissipation
Capacitance
(note 1)
18
pF
74VHC541
5/9
DYNAMIC SWITCHING CHARACTERISTICS
1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 5.0V, (n-1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 5.0V. Inputs under test switching: 5.0V to threshold (V
ILD
), 0V to threshold
(V
IHD
), f=1MHz.
TEST CIRCUIT
C
L
=15/50pF or equivalent (includes jig and probe capacitance)
R
L
= R1 = 1K
or equivalent
R
T
= Z
OUT
of pulse generator (typically 50
)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
OLP
Dynamic Low
Voltage Quiet
Output (note 1, 2)
5.0
C
L
= 50 pF
0.6
0.8
V
V
OLV
-0.8
-0.6
V
IHD
Dynamic High
Voltage Input
(note 1, 3)
5.0
3.5
V
V
ILD
Dynamic Low
Voltage Input
(note 1, 3)
5.0
1.5
V
TEST
SWITCH
t
PLH
, t
PHL
Open
t
PZL
, t
PLZ
V
CC
t
PZH
, t
PHZ
GND
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