74VHCT00A
QUAD 2-INPUT NAND GATE
PRELIMINARY DATA
August 1999
s
HIGH SPEED: t
PD
= 5 ns (TYP.) at V
CC
= 5V
s
LOW POWER DISSIPATION:
I
CC
= 2
A (MAX.) at T
A
= 25
o
C
s
COMPATIBLE WITH TTL OUTPUTS:
V
IH
= 2V (MIN), V
IL
= 0.8V (MAX)
s
POWER DOWN PROTECTION ON INPUTS &
OUTPUTS
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8 mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
s
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 00
s
IMPROVED LATCH-UP IMMUNITY
s
LOW NOISE: V
OLP
= 0.8V (Max.)
DESCRIPTION
The 74VHCT00A is an advanced high-speed
CMOS QUAD 2-INPUT NAND GATE fabricated
with sub-micron silicon gate and double-layer
metal wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be used to interface 5V to 3V.
All inputs
and
outputs are
equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES :
74VHCT00AM
74VHCT00AT
M
(Micro Package)
T
(TSSOP Package)
1/7
INPUT EQUIVALENT CIRCUIT
TRUTH TABLE
A
B
Y
L
L
H
L
H
H
H
L
H
H
H
L
PIN DESCRIPTION
PI N No
SYMBOL
NAME AND FUNCT ION
1, 4, 9, 12
1A to 4A
Data Inputs
2, 5, 10, 13
1B to 4B
Data Inputs
3, 6, 8, 11
1Y to 4Y
Data Outputs
7
GND
Ground (0V)
14
V
CC
Positive Supply Voltage
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Valu e
Uni t
V
CC
Supply Voltage
4.5 to 5.5
V
V
I
Input Voltage
0 to 5.5
V
V
O
Output Voltage (see note 1)
0 to 5.5
V
V
O
Output Voltage (see note 2)
0 to V
CC
V
T
op
Operating Temperature
-40 to +85
o
C
dt/dv
Input Rise and Fall Time (see note 3) (V
CC
= 5.0
0.5V)
0 to 20
ns/V
1) V
CC
= 0V
2) High or Low State
3)V
IN
from0.8V to 2 V
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage
-0.5 to +7.0
V
V
O
DC Output Voltage (see note 1)
-0.5 to +7.0
V
V
O
DC Output Voltage (see note 2)
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
- 20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
T
stg
Storage Temperature
-65 to +150
o
C
T
L
Lead Temperature (10 sec)
300
o
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
1) V
CC
= 0V
2) High or Low State
74VHCT00A
2/7
DC SPECIFICATIONS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
V
CC
(V)
T
A
= 25
o
C
-40 to 85
o
C
Min.
Typ .
Max.
Min .
Max.
V
IH
High Level Input
Voltage
4.5 to 5.5
2
2
V
V
IL
Low Level Input
Voltage
4.5 to 5.5
0.8
0.8
V
V
OH
High Level Output
Voltage
4.5
I
O
=-50
A
4.4
4.5
4.4
V
4.5
I
O
=-8 mA
3.94
3.8
V
OL
Low Level Output
Voltage
4.5
I
O
=50
A
0.0
0.1
0.1
V
4.5
I
O
=8 mA
0.36
0.44
I
I
Input Leakage Current
0 to 5.5
V
I
= 5.5V or GND
0.1
1.0
A
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
2
20
A
I
CC
Additional Worst Case
Supply Current
5.5
One Input at 3.4V,
other input at V
CC
or
GND
1.35
1.5
mA
I
OPD
Output Leakage
Current
0
V
OUT
= 5.5V
0.5
5.0
A
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
T
A
= 25
o
C
-40 to 85
o
C
Min.
Typ .
Max.
Min .
Max.
C
IN
Input Capacitance
4
10
10
pF
C
PD
Power Dissipation
Capacitance (note 1)
10.5
pF
1) C
PD
isdefined as the value of the IC'sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. I
CC
(opr) = C
PD
V
CC
f
IN
+ I
CC
/4(per Gate)
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
=3 ns)
Symb ol
Parameter
Test Co nditi on
Val ue
Un it
V
CC
(*)
(V)
C
L
(pF )
T
A
= 25
o
C
-40 to 85
o
C
Min.
Typ .
Max.
Min .
Max.
t
PLH
t
PHL
Propagation Delay
Time
5.0
15
5.0
7.0
1.0
8.0
ns
5.0
50
5.5
8.0
1.0
9.0
(*) Voltage range is 5V
0.5V
74VHCT00A
3/7
DYNAMIC SWITCHING CHARACTERISTICS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
V
CC
(V)
T
A
= 25
o
C
-40 to 85
o
C
Min.
Typ .
Max.
Min .
Max.
V
OLP
Dynamic Low Voltage
Quiet Output (note 1, 2)
5.0
C
L
= 50 pF
0.4
0.8
V
V
OLV
-0.8
-0.4
V
IHD
Dynamic High Voltage
Input (note 1, 3)
5.0
2.0
V
IL D
Dynamic Low Voltage
Input (note 1, 3)
5.0
0.8
1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.0, (n -1) outputs switching and one output atGND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to3.0V. Inputs under test switching: 3.0V to threshold (V
ILD
), 0V to threshold (V
IHD
), f=1MHz.
TEST CIRCUIT
C
L
= 15/50 pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50
)
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
74VHCT00A
4/7
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
1.75
0.068
a1
0.1
0.2
0.003
0.007
a2
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45 (typ.)
D
8.55
8.75
0.336
0.344
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
7.62
0.300
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
0.68
0.026
S
8 (max.)
P013G
SO-14 MECHANICAL DATA
74VHCT00A
5/7
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