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Электронный компонент: 74VHCT86ATTR

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1/8
June 2001
s
HIGH SPEED: t
PD
= 5.5ns (TYP.) at V
CC
= 5V
s
LOW POWER DISSIPATION:
I
CC
= 2
A (MAX.) at T
A
=25C
s
COMPATIBLE WITH TTL OUTPUTS:
V
IH
= 2V (MIN.), V
IL
= 0.8V (MAX)
s
POWER DOWN PROTECTION ON INPUTS
& OUTPUTS
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8 mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
s
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 86
s
IMPROVED LATCH-UP IMMUNITY
s
LOW NOISE: V
OLP
= 0.8V (MAX.)
DESCRIPTION
The 74VHCT86A is an advanced high-speed
CMOS QUAD EXCLUSIVE OR GATE fabricated
with sub-micron silicon gate and double-layer
metal wiring C
2
MOS technology.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be used to interface 5V to 3V since all
inputs are equipped with TTL threshold.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
74VHCT86A
QUAD EXCLUSIVE OR GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE
TUBE
T & R
SOP
74VHCT86AM
74VHCT86AMTR
TSSOP
74VHCT86ATTR
TSSOP
SOP
74VHCT86A
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INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) V
CC
= 0V
2) High or Low State
RECOMMENDED OPERATING CONDITIONS
1) V
CC
= 0V
2) High or Low State
3) VIN from 0.8V to 2V
PIN No
SYMBOL
NAME AND FUNCTION
1, 4, 9, 12
1A to 4A
Data Inputs
2, 5, 10, 13
1B to 4B
Data Inputs
3, 6, 8, 11
1Y to 4Y
Data Outputs
7
GND
Ground (0V)
14
V
CC
Positive Supply Voltage
A
B
Y
L
L
L
L
H
H
H
L
H
H
H
L
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage
-0.5 to +7.0
V
V
O
DC Output Voltage (see note 1)
-0.5 to +7.0
V
V
O
DC Output Voltage (see note 2)
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
- 20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
4.5 to 5.5
V
V
I
Input Voltage
0 to 5.5
V
V
O
Output Voltage (see note 1)
0 to 5.5
V
V
O
Output Voltage (see note 2)
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
dt/dv
Input Rise and Fall Time (see note 3) (V
CC
= 5.0
0.5V)
0 to 20
ns/V
74VHCT86A
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DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3ns)
(*) Voltage range is 5.0V
0.5V
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/4 (per gate)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
4.5 to
5.5
2
2
2
V
V
IL
Low Level Input
Voltage
4.5 to
5.5
0.8
0.8
0.8
V
V
OH
High Level Output
Voltage
4.5
I
O
=-50
A
4.4
4.5
4.4
4.4
V
4.5
I
O
=-8 mA
3.94
3.8
3.7
V
OL
Low Level Output
Voltage
4.5
I
O
=50
A
0.0
0.1
0.1
0.1
V
4.5
I
O
=8 mA
0.36
0.44
0.55
I
I
Input Leakage
Current
0 to
5.5
V
I
= 5.5V or GND
0.1
1.0
1.0
A
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
2
20
20
A
I
CC
Additional Worst
Case Supply
Current
5.5
One Input at 3.4V,
other input at V
CC
or GND
1.35
1.5
1.5
mA
I
OPD
Output Leakage
Current
0
V
OUT
= 5.5V
0.5
5.0
5.0
A
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(*)
(V)
C
L
(pF)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
PLH
t
PHL
Propagation Delay
Time
5.0
15
5.5
7.9
1.0
9.0
1.0
9.0
ns
5.0
50
6.3
8.5
1.0
10.0
1.0
10.0
Symbol
Parameter
Test Condition
Value
Unit
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
6
10
10
10
pF
C
PD
Power Dissipation
Capacitance
(note 1)
18
pF
74VHCT86A
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DYNAMIC SWITCHING CHARACTERISTICS
1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.0V, (n-1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.0V. Inputs under test switching: 3.0V to threshold (V
ILD
), 0V to threshold
(V
IHD
), f=1MHz.
TEST CIRCUIT
C
L
=15/50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50
)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
OLP
Dynamic Low
Voltage Quiet
Output (note 1, 2)
5.0
C
L
= 50 pF
0.3
0.8
V
V
OLV
-0.8
-0.3
V
IHD
Dynamic High
Voltage Input
(note 1, 3)
5.0
2.0
V
ILD
Dynamic Low
Voltage Input
(note 1, 3)
5.0
0.8
74VHCT86A
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WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)