1/11
November 2004
s
HIGH SPEED: t
PD
= 3.5 ns (TYP.) at V
CC
= 5V
s
LOW POWER DISSIPATION:
I
CC
= 2
A (MAX.) at T
A
=25C
s
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 10% V
CC
(MIN.)
s
POWER DOWN PROTECTION ON INPUTS
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8 mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
s
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 04
s
IMPROVED LATCH-UP IMMUNITY
s
LOW NOISE: V
OLP
= 0.8V (MAX.)
DESCRIPTION
The 74VHCU04 is an advanced high-speed
CMOS HEX INVERTER fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
As the internal circuit is composed of a single
stage inverter, it can be used in analog
applications such as crystal oscillator.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be used to interface 5V to 3V since all
inputs are equipped with TTL threshold.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
74VHCU04
HEX INVERTER (SINGLE STAGE)
Figure 1: Pin Connection And IEC Logic Symbols
Table 1: Order Codes
PACKAGE
T & R
SOP
74VHCU04MTR
TSSOP
74VHCU04TTR
TSSOP
SOP
Rev. 5
74VHCU04
2/11
Figure 2: Input Equivalent Circuit
Table 2: Pin Description
Table 3: Truth Table
Table 4: Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Table 5: Recommended Operating Conditions
1) V
IN
from 30% to 70% of V
CC
PIN N
SYMBOL
NAME AND FUNCTION
1, 3, 5, 9, 11,
13
1A to 6A
Data Inputs
2, 4, 6, 8, 10,
12
1Y to 6Y
Data Outputs
7
GND
Ground (0V)
14
V
CC
Positive Supply Voltage
A
Y
L
H
H
L
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage
-0.5 to +7.0
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
- 20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
2.0 to 5.5
V
V
I
Input Voltage
0 to 5.5
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
dt/dv
Input Rise and Fall Time (see note 1) (V
CC
= 3.3
0.3V)
(V
CC
= 5.0
0.5V)
0 to 100
0 to 20
ns/V
74VHCU04
3/11
Table 6: DC Specifications
Table 7: AC Electrical Characteristics (Input t
r
= t
f
= 3ns)
(*) Voltage range is 3.3V
0.3V
(**) Voltage range is 5.0V
0.5V
Table 8: Capacitive Characteristics
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/6 (per gate)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
2.0
1.7
1.7
1.7
V
3.0 to
5.5
0.8V
CC
0.8V
CC
0.8V
CC
V
IL
Low Level Input
Voltage
2.0
0.3
V
3.0 to
5.5
0.2
V
CC
0.2
V
CC
0.2
V
CC
V
OH
High Level
Output Voltage
2.0
I
O
=-50
A
1.8
2.0
1.8
1.8
V
3.0
I
O
=-50
A
2.7
3.0
2.7
2.7
4.5
I
O
=-50
A
4.0
4.5
4.0
4.0
3.0
I
O
=-4 mA
2.58
2.48
2.48
4.5
I
O
=-8 mA
3.94
3.8
3.8
V
OL
Low Level Output
Voltage
2.0
I
O
=50
A
0.0
0.2
0.2
0.2
V
3.0
I
O
=50
A
0.0
0.3
0.3
0.3
4.5
I
O
=50
A
0.0
0.5
0.5
0.5
3.0
I
O
=4 mA
0.36
0.44
0.44
4.5
I
O
=8 mA
0.36
0.44
0.44
I
I
Input Leakage
Current
0 to
5.5
V
I
= 5.5V or GND
0.1
1.0
1.0
A
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
2
20
20
A
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
PLH
t
PHL
Propagation Delay
Time
3.3(*)
15
5.0
8.9
1.0
10.5
1.0
10.5
ns
3.3(*)
50
7.5
11.4
1.0
13.0
1.0
13.0
5.0(**)
15
3.5
5.5
1.0
6.5
1.0
6.5
ns
5.0(**)
50
5.0
7.0
1.0
8.0
1.0
8.0
Symbol
Parameter
Test Condition
Value
Unit
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
5
10
10
10
pF
C
PD
Power Dissipation
Capacitance
(note 1)
13
pF
74VHCU04
4/11
Table 9: Dynamic Switching Characteristics
1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 5.0V, (n-1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 5.0V. Inputs under test switching: 5.0V to threshold (V
ILD
), 0V to threshold
(V
IHD
), f=1MHz.
Figure 3: Test Circuit
C
L
=15/50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50
)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
OLP
Dynamic Low
Voltage Quiet
Output (note 1, 2)
5.0
C
L
= 50 pF
0.5
0.8
V
V
OLV
-0.8
-0.5
V
IHD
Dynamic High
Voltage Input
(note 1, 3)
5.0
4.0
V
ILD
Dynamic Low
Voltage Input
(note 1, 3)
5.0
0.8
74VHCU04
5/11
Figure 4: Waveform - Propagation Delays (f=1MHz; 50% duty cycle)
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