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ACST6-7S
January 2002 - Ed: 7F
OVER VOLTAGE PROTECTED
AC POWER SWITCH
TO-220AB
ACST6-7ST
s
V
DRM
/ V
RRM
= +/- 700V
s
Avalanche controlled device
s
I
T(RMS)
=1.5 A with no heat sink and T
amb
= 40C
s
I
T(RMS)
= 6A with T
CASE
= 105 C
s
High noise immunity: static dV/dt > 200 V/s
s
Gate triggering current : I
GT
< 10 mA
s
Snubberless turn off commutation:
(dI/dt)c > 3.5A/ms
s
D
2
PAK, I
2
PAK, TO-220FPAB or TO-220
package
FEATURES
The ACST6-7Sx belongs to the AC power switch
family built around the ASD technology. This high
performance device is adapted to home appliances
or industrial systems and drives an induction motor
up to 6A.
This ACST switch embeds a triac structure with a
high voltage clamping device to absorb the inductive
turn-off energy and withstand line transients such as
those described in the IEC61000-4-5 standards.
DESCRIPTION
COM
OUT
OUT
G
s
Enables equipment to meet IEC61000-4-5
standards
s
High off-state reliability with planar technology
s
Needs no external overvoltage protection
s
Direct interface with the microcontroller
s
Reduces the power component count
BENEFITS
G
COM
OUT
FUNCTIONAL DIAGRAM:
s
AC static switching in appliance & industrial
control systems
s
Induction motor drive actuator for:
- Refrigerator / Freezer compressor
- Dishwasher spray pump
- Clothes drier tumble
s
Actuator for the thermostat of a refrigerator or
freezer
MAIN APPLICATIONS
ASDTM
AC Switch Family
G
OUT
COM
D
2
PAK
ACST6-7SG
COM
G
OUT
TO-220FPAB
ACST6-7SFP
COM
OUT
G
OUT
I
2
PAK
ACST6-7SR
ACST6-7S
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Symbol
Parameter
Value
Unit
V
DRM /
V
RRM
Repetitive peak off-state voltage
Tj = 125 C
700
V
I
T(RMS)
RMS on-state current full cycle sine wave 50 to 60 Hz,
no heat sink
Tamb = 40 C
1.5
A
RMS on-state current full cycle sine wave 50 to 60 Hz,
TO-220AB package
Tcase= 105 C
6
A
I
TSM
Non repetitive surge peak on-state current
Tj initial = 25C, full cycle sine wave
tp = 20ms
45
A
tp = 16.7ms
50
A
I
2
t
Thermal constraint for fuse selection
tp = 10ms
11
A
2
s
dI/dt
Non repetitive on-state current critical rate of rise
I
G
= 10mA (t
R
< 100ns)
Rate period > 1mn
100
A/
s
V
PP
Non repetitive line peak pulse voltage
note 1
2
kV
Tstg
Storage temperature range
- 40 to + 150
C
Tj
Operating junction temperature range
- 30 to + 125
C
Tl
Maximum lead soldering temperature during 10s
260
C
Note 1: according to test described by IEC61000-4-5 standard & Figure A.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
P
G (AV)
Average gate power dissipation
0.1
W
P
GM
Peak gate power dissipation (tp = 20s)
10
W
I
GM
Peak gate current (tp = 20s)
1
A
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient TO-220AB / TO-220FPAB
60
C/W
Rth (j-a)
Junction to ambient I
2
PAK
65
C/W
Rth (j-a)
Junction to ambient D
2
PAK soldered on 1cm
2
copper pad
45
C/W
Rth (j-c)
Junction to case for full cycle sine wave conduction (TO-220AB)
2.5
C/W
Rth (j-c)
Junction to case for full cycle sine wave conduction (TO-220FPAB)
3.5
C/W
THERMAL RESISTANCE
ACST6-7S
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Symbol
Test conditions
Values
Unit
I
GT
Vout = 12V (DC)
R
L
= 33
Tj = 25C
MAX.
10
mA
V
GT
Vout = 12V (DC)
R
L
= 33
Tj = 25C
MAX.
1.5
V
V
GD
V
OUT
= V
DRM
R
L
= 3.3k
Tj =125C
MIN.
0.2
V
I
H
I
OUT
= 100mA Gate open
Tj = 25C
MAX.
25
mA
I
L
I
G
= 20mA
Tj = 25C
MAX.
50
mA
V
TM
I
OUT
= 2.1A
tp = 380s
Tj = 25C
MAX.
1.4
V
V
TM
I
OUT
= 8.5A
tp = 380s
Tj = 25C
MAX.
1.7
V
V
to
Tj = 125C
MAX.
0.9
V
R
D
Tj = 125C
MAX.
80
m
I
DRM
I
RRM
V
OUT
= V
DRM
V
OUT
= V
RRM
Tj = 25C
MAX.
20
A
Tj = 125C
MAX.
500
A
dV/dt
V
OUT
= 600V
gate open
Tj = 125C
MIN.
200
V/
s
(dI/dt)c
(dV/dt)c = 15V/
s
Tj = 125C
MIN.
3
A/ms
(dI/dt)c
(dV/dt)c = 15V/
s Iout < 0 Rgk = 150
Tj = 125C
MIN.
3.5
A/ms
V
CL
I
CL
= 1mA
tp = 1ms
Tj = 25C
TYP.
1100
V
ELECTRICAL CHARACTERISTICS PER SWITCH
For either positive or negative polary of pin OUT voltage in respect to pin COM voltage
Parameter Symbol
Parameter description
I
GT
Gate triggering current
V
GT
Gate triggering voltage
V
GD
Non triggering voltage
I
H
Holding current
I
L
Latching current
V
TM
On state voltage
V
TO
On state characteristic threshold voltage
R
D
On state characteristic dynamic resistance
I
DRM
/ I
RRM
Forward or reverse leakage current
dV/dt
Static pin OUT voltage rise
(dI/dt)c
Turn off current rate of decay
V
CL
Avalanche voltage at turn off
PARAMETER DESCRIPTION
ACST6-7S
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ST 62/72
MCU
COM
OUT
G
Run
Start
ST 62/72
MCU
Run
Start
COM
OUT
G
TYPICAL APPLICATION DIAGRAM
The ACST6-7S device is especially designed to drive medium power induction motors in refrigerators, dish
washers, and tumble dryers.
Pin COM
: Common drive reference, to be connected to the power line neutral
Pin G
: Switch Gate input to be connected to the controller
Pin OUT
: Switch Output to be connected to the load
When driven from a low voltage controller, the ACST switch is triggered with a negative gate current flow-
ing out of the gate pin G. It can be directly driven by the controller through a resistor as shown on the typical
application diagram. In appliance systems, the ACST6-7S switch intends to drive medium power load in
ON / OFF full cycle or phase angle control mode.
Thanks to its thermal and turn-off commutation characteristics, the ACST6-7S switch is able to drive an
inductive load up to 6A without a turn-off aid snubber circuit.
AC LINE SWITCH BASIC APPLICATION
The ACST6-7S switch is able to safely withstand the AC line transient voltages either by clamping the low
energy spikes or by breaking over under high energy shocks.
The test circuit in Figure A is representative of the ACST application and is used to test the ACST switch
according to the IEC61000-4-5 standard conditions. Thanks to the load impedance, the ACST switch with-
stands voltage spikes up to 2 kV above the peak line voltage by breaking over safely. Such non-repetitive
testing can be done 10 times on each AC line voltage polarity.
AC LINE TRANSIENT VOLTAGE RUGGEDNESS
L
R
V
AC
+ V
PP
SURGE VOLTAGE
AC LINE & GENERATOR
G
COM
OUT
Fig. A: Overvoltage ruggedness test circuit for resistive and inductive loads according
to IEC61000-4-5 standard R = 10
, L = 5H & V
PP
= 2kV
ACST6-7S
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0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
IT(RMS) (A)
P (W)
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
0
25
50
75
100
125
0
1
2
3
4
5
6
7
Tc(C)
IT(RMS) (A)
TO-220AB
DPAK
TO-220FP
Fig. 2-1: RMS on-state current versus case
temperature (full cycle).
0
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Tamb(C)
IT(RMS) (A)
DPAK
S=1cm
TO-220AB or TO-220FP
Free air
Fig. 2-2: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35m), full cycle.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
1E-3
1E-2
1E-1
1E+0
tp (s)
K=[Zth/Rth]
Zth(j-a)
Zth(j-c)
TO-220AB
& DPAK
Zth(j-c)
TO-220FP
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.1
1.0
10.0
50.0
VTM (V)
ITM (A)
Tj=25C
Tj max.
Tj max.:
Vto = 0.9 V
Rd = 80 mW
Fig. 4: On-state characteristics (maximum values).
1
10
100
1000
0
5
10
15
20
25
30
35
40
45
50
Number of cycles
ITSM (A)
Non repetitive
Tj initial=25C
Repetitive
Tc=105C
One cycle
t=20ms
Fig. 5: Surge peak on-state current versus number
of cycles.
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