PRELIMINARY DATA
August 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2NLFL (S042)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
INTERNAL INPUT MATCHING
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
220 W MIN. WITH 8.7 dB GAIN
DESCRIPTION
The AM0608-200 is an internally-matched, com-
mon base silicon bipolar device optimized pulsed
application in the 600 - 750 MHz frequency range.
Housed in the industry-standard AMPACTM met-
al/ceramic package, this device uses a refrac-
tory/gold overlay die geometry for ruggedness and
long-term reliability.
PIN CONNECTION
BRANDING
0608-200
ORDER CODE
AM0608-200
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation*
(T
C
75C)
875
W
I
C
Device Current*
16.0
A
V
CC
Collector-Supply Voltage*
55
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
0.20
C/W
*Applies only to rated RF amplifier operation
AM0608-200
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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AM0608-200
3/3
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