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Электронный компонент: AM1011-070

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RF & MICROWAVE TRANSISTORS
September 1992
L-BAND AVIONICS APPLICATIONS
.400 x . 400 2NLFL (S042)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
70 W MIN. WITH 6.7 dB GAIN
DESCRIPTION
The AM1011-070 device is a high power Class
C transistor specifically designed for L-Band
Avionics transponder/interrogator pulsed output
and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and is capable of withstanding severe output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM1011-070 is supplied in the AMPAC
TM
Her-
metic M etal/Ceramic package with i nternal
Input/Output matching structures.
PIN CONNECTION
BRANDING
1011-70
ORDER CODE
AM1011-70
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
P
DISS
Power Dissipation*
(T
C
100
C)
200
W
I
C
Device Current*
8.0
A
V
CC
Collector-Supply Voltage*
32
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
0.68
C/W
*Applies only to rated RF amplifier operation
AM1011-070
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
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ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
1090 MHz
P
IN
=
15W
V
CC
=
28V
70
--
--
W
c
f
=
1090 MHz
P
IN
=
15W
V
CC
=
28V
45
--
--
%
G
P
f
=
1090 MHz
P
IN
=
15W
V
CC
=
28V
6.7
--
--
dB
N ote:
Pulse W idth
=
100
Sec
Duty Cycle
=
2%
STATIC
Symbol
Test Condi tions
Valu e
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
25mA
I
E
=
0mA
55
--
--
V
BV
EBO
I
E
=
10mA
I
C
=
0mA
3.5
--
--
V
BV
CER
IC
=
25mA
R
BE
=
10
55
--
--
V
I
CES
V
CE
=
35V
--
--
20
mA
h
FE
V
CE
=
5V
I
C
=
2mA
20
--
200
--
DYNAMIC
AM1011-070
2/4
TEST CIRCUIT
All dimensions are in inches.
Substrate material: .025 thick AI
2
O
3
C1
: 0.3--3.5 pF Johanson Gigatrim Capacitor
C2
: 0.3--3.5 pF Johanson Gigatrim Capacitor
C3
: 100 pF Chip Capacitor
C4
: 1500 pF Erie Feedthru, or Equiv.
C5
: 100 MF Electrolytic Capacitor, 50V
C6
: 1500 pF Erie Feedthrough, or Equiv.
L1
: #32 Wire, 4 Turn .062 I.D.
L2
: #32 Wire, 4 Turn .062 I.D.
RBE
: 0 -- 1.0 Ohm
Ref. Dwg. No. J313119
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
P
IN
=
15 W
V
CC
=
28 V
Normalized to 50 ohms
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
L
=
1025 MHz
4.7 + j 4.7
3.6 + j 4.3
H
=
1090 MHz
4.7 + j 3.9
3.3 + j 4.4
AM1011-070
3/4
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
AM1011-070
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