September 1992
L-BAND AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2LFL (S036)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
10:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
75 W MIN. WITH 9.2 dB GAIN
DESCRIPTION
The AM1011-075 device is a high power Class
C transistor specifically designed for L-Band
Avionics transponder/interrogator pulsed output
and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding 10:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM1011-075 is supplied in the AMPAC
TM
Her-
metic M etal/Ceramic package with i nternal
Input/Output matching structures.
PIN CONNECTION
BRANDING
1011-75
ORDER CODE
AM1011-075
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation*
(T
C
100
C)
175
W
I
C
Device Current*
5.4
A
V
CC
Collector-Supply Voltage*
55
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
0.86
C/W
*Applies only to rated RF amplifier operation
AM1011-075
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/4
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditions
Value
Uni t
Mi n.
Typ.
Max.
P
OUT
f
=
1090MHz
P
IN
=
9W Peak
V
CC
=
50V
75
84
--
W
c
f
=
1090MHz
P
IN
=
9W Peak
V
CC
=
50V
48
56
--
%
G
P
f
=
1090MHz
P
IN
=
9W Peak
V
CC
=
50V
9.2
9.7
--
dB
N ote:
Pul se Widt h
=
32
Sec
Duty Cycle
=
2%
STATIC
Symbol
Test Condi tions
Valu e
Unit
Mi n.
Typ.
Max.
BV
CBO
I
C
=
10mA
I
E
=
0mA
65
--
--
V
BV
EBO
I
E
=
4mA
I
C
=
0mA
3.5
--
--
V
BV
CER
IC
=
20mA
R
BE
=
10
65
--
--
V
I
CES
V
CE
=
50V
--
--
6
mA
h
FE
V
CE
=
5V
I
C
=
1mA
10
--
--
--
DYNAMIC
TYPICAL PERFORMANCE
20
30
40
50
60
70
80
90
100
110
120
40
45
50
55
60
65
70
75
80
4
5
6
7
8
9
10
11
12
13
14
15
16
TYPICAL POWER OUTPUT & COLLECTOR
EFFICIENCY vs POWER INPUT
P
O
W
E
R
O
U
T
P
U
T
W
A
T
T
S
POWER INPUT (WATTS)
C
O
L
L
E
C
T
O
R
E
F
F
.
%
POWER INPUT (WATTS)
C
P
OUT
TYPICAL POWER OUTPUT &
COLLECTOR EFFICIENCY vs
POWER INPUT
AM1011-075
2/4
TEST CIRCUIT
All dimensions are in inches.
Substrate material: .025 thick AI
2
O
3
C1
: 0.8--8.0 pF Johanson Gigatrim Capacitor
C2
: 100 pF Chip Capacitor
C3
: 1500 pF Filtercon Feedthru
C4
: 1
F, Ceramic Capacitor
C5
: 100
F, Electrolytic Capacitor
RFC 1: Au Plated Ni Strap
0.280 Long x 0.035 Wide x 0.005 Thick
RFC 2: #26 Wire, 4 Turn 1/16 I.D.
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
P
IN
=
9.0 W
V
CC
=
50 V
Normalized to 50 ohms
Z
CL
L
H
Z
IN
H
L
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
L
=
1030 MHz
7.0 + j 3.0
12.5
-
j 4.5
H
=
1090 MHz
11.0 + j 1.5
13.0
-
j 3.0
AM1011-075
3/4
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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AM1011-075
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