ChipFind - документация

Электронный компонент: AM1214-100

Скачать:  PDF   ZIP
PRELIMINARY DATA
August 1992
L-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (S038)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
100 W MIN. WITH 6.0 dB GAIN
DESCRIPTION
The AM1214-100 device is a high power Class
C transistor specifically designed for L-Band Radar
pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding 3:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
AM1214-100 is supplied in the grounded IMPACTM
hermetic metal/ceramic package with internal
input/output matching structures.
PIN CONNECTION
BRANDING
1214-100
ORDER CODE
AM1214-100
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation*
(T
C
100C)
270
W
I
C
Device Current*
13.5
A
V
CC
Collector-Supply Voltage*
32
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
0.55
C/W
*Applies only to rated RF amplifier operation
AM1214-100
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/3
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
P
OUT
f
=
1215 -- 1400MHz
P
IN
=
25W
V
CC
=
28V
100
--
--
W
c
f
=
1215 -- 1400MHz
P
IN
=
25W
V
CC
=
28V
50
--
--
%
G
P
f
=
1215 -- 1400MHz
P
IN
=
25W
V
CC
=
28V
6.0
--
--
dB
Note:
Pulse Width
=
100
Sec
Duty Cycle
=
10%
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
50mA
I
E
=
0mA
65
--
--
V
BV
EBO
I
E
=
10mA
I
C
=
0mA
3.5
--
--
V
BV
CES
IC
=
100mA
65
--
--
V
I
CES
V
BE
=
0V
V
CE
=
32V
--
--
20
mA
h
FE
V
CE
=
5V
I
C
=
5A
15
--
--
--
DYNAMIC
PACKAGE MECHANICAL DATA
AM1214-100
2/3
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
AM1214-100
3/3