September 1992
L-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (S038)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
3:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
160 W MIN. WITH 7.3 dB GAIN
DESCRIPTION
The AM1214-175 device is a high power Class
C transistor specifically designed for L-Band radar
pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and is capable of withstanding 3:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM1214-175 is supplied in the BIGPAC
TM
Her-
metic M etal/Ceramic package with i nternal
Input/Output matching structures.
PIN CONNECTION
BRANDING
1214-175
ORDER CODE
AM1214-175
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
P
DISS
Power Dissipation*
(T
C
100
C)
330
W
I
C
Device Current*
14
A
V
CC
Collector-Supply Voltage*
45
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
0.45
C/W
*Applies only to rated RF amplifier operation
AM1214-175
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/6
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