PRELIMINARY DATA
September 1992
L-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x . 500 2LFL (M205)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
200 W MIN. WITH 7.0 dB GAIN
DESCRIPTION
The AM1214-200 device is a high power Class
C transistor specifically designed for L-Band Radar
pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures, and wiil tolerate severe mismatch and over-
drive conditions. Low RF thermal resistance and
computerized automatic wire bonding techniques
ensure high reliability and product consistency.
AM1214-200 is supplied in the BIGPAC
TM
hermetic
metal/ceramic package with internal input/output
matching structures.
PIN CONNECTION
BRANDING
1214-200
ORDER CODE
AM1214-200
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
P
DISS
Power Dissipation*
(T
C
100
C)
575
W
I
C
Device Current*
16
A
V
CC
Collector-Supply Voltage*
40
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
0.26
C/W
*Applies only to rated RF amplifier operation
AM1214-200
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/4
TEST CIRCUIT
All dimensions are in millimeters.
Substrate 0.025" Thick AL
2
0
3
(Er
=
9.8)
C1,C2 :
0.6 - 4.5 pF Johanson 7475 Variable Capacitor
C3
: 100 pF Case B Chip Capacitor
C4
: 100
F, 63V Electrolytic Capacitor
C5
: 68 pF Case B Chip Capacitor
C6
: 620 pF Case B Chip Capacitor
C7
: 0.1
F Ceramic Capacitor
C8
: Feedthru bypass 1200 pF
L1
: .018" OD Wire - Placement is Critical
L2
: 4 Turn .018" OD Inductor
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
P
IN
=
40W
V
CC
=
40V
Normalized to 50 ohms
Z
IN
Z
CL
L
L
H
H
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
L
=
1215 MHz
2.7 + j 7.0
1.7
-
j 4.0
M
=
1300 MHz
3.0 + j 4.8
1.4
-
j 4.0
H
=
1400 MHz
1.8 + j 1.7
1.0
-
j 2.0
AM1214-200
3/4
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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AM1214-200
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