September 1992
L-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (S038)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
5:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
270 W MIN. WITH 6.3 dB GAIN
DESCRIPTION
The AM1214-300 device is a high power transistor
specifically designed for L-Band radar pulsed out-
put and driver applications.
This device is designed for operation under moder-
ate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 output VSWR
at rated RF conditions. Low RF thermal resistance
and computerized automatic wire bonding tech-
niques ensure high reliability and product consist-
ency.
The AM1214-300 is supplied in the BIGPAC
TM
Her-
metic M etal/Ceramic package with i nternal
Input/Output matching structures.
PIN CONNECTION
BRANDING
1214-300
ORDER CODE
AM1214-300
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
P
DISS
Power Dissipation*
(T
C
100
C)
730
W
I
C
Device Current*
18.75
A
V
CC
Collector-Supply Voltage*
55
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
0.24
C/W
*Applies only to rated RF amplifier operation
AM1214-300
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/6
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