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Электронный компонент: AM1214-325

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September 1992
L-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x . 500 2LFL (S038)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
5:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
325 W MIN. WITH 6.4 dB GAIN
DESCRIPTION
The AM1214-325 device is a high power transistor
specifically designed for L-Band radar pulsed out-
put and driver applications.
This device is designed for operation under moder-
ate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 VSWR at rated
RF conditions. Low RF thermal resistance and
computerized automatic wire bonding techniques
ensure high reliability and product consistency.
The AM1214-325 is supplied in the BIGPAC
TM
Her-
metic M etal/Ceramic package with i nternal
Input/Output matching structures.
PIN CONNECTION
BRANDING
1214-325
ORDER CODE
AM1214-325
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
P
DISS
Power Dissipation*
(T
C
100
C)
1250
W
I
C
Device Current*
25
A
V
CC
Collector-Supply Voltage*
45
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
0.10
C/W
*Applies only to rated RF amplifier operation
AM1214-325
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
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ELECTRICAL SPECIFICATIONS (Tcase
=
25
C)
Symbol
Test Conditions
Value
Uni t
Mi n.
Typ.
Max.
P
OUT
f
=
1200 -- 1400MHz
P
IN
=
75W
V
CC
=
45V
325
360
--
W
c
f
=
1200 -- 1400MHz
P
IN
=
75W
V
CC
=
45V
38
45
--
%
G
P
f
=
1200 -- 1400MHz
P
IN
=
75W
V
CC
=
45V
6.4
6.8
--
dB
N ote:
Pul se Widt h
=
13
Sec
Duty Cycle
=
2%
STATIC
Symbol
Test Condi tions
Valu e
Unit
Mi n.
Typ.
Max.
BV
CBO
I
C
=
50mA
I
E
=
0mA
65
--
--
V
BV
EBO
I
E
=
15mA
I
C
=
0mA
3.0
--
--
V
BV
CES
IC
=
50mA
65
--
--
V
I
CES
V
CE
=
50V
--
--
30
mA
h
FE
V
CE
=
5V
I
C
=
5A
10
--
--
--
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT & EFFICIENCY
vs FREQUENCY
AM1214-325
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TEST CIRCUIT
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
P
IN
=
75 W
V
CC
=
45 V
Normalized to 50 ohms
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
L
=
1.2 GHz
4.0 + j 3.5
3.0
-
j 3.0
M
=
1.3 GHz
3.0 + j 4.0
2.0
-
j 2.5
H
=
1.4 GHz
2.0 + j 3.5
1.0
-
j 2.0
AM1214-325
3/4
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
AM1214-325
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