September 1992
SATELLITE COMMUNICATIONS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2NLFL (S042)
hermeticallysealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
12 W MIN. WITH 8.5 dB GAIN
DESCRIPTION
The AM1517-012 power transistor is designed spe-
cifically for Satellite communications applications
in the 1.5
-
1.7 GHz frequency range.
The device is capable of withstanding any mis-
match load condition at any phase angle (VSWR
:1) under full rated conditions. The unit is an
overlay, emitter site ballasted, geometry utilizing
a Refractory/Gold metallization system.
The AM1517-012 is supplied in the AMPAC
TM
Her-
metic/Ceramic package with internal Input/Output
matching structures.
PIN CONNECTION
BRANDI NG
1517-12
ORDER CODE
AM1517-012
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation*
(T
C
100
C)
27
W
I
C
Device Current*
1.25
A
V
CC
Collector-Supply Voltage*
30
V
T
J
Junction Temperature
200
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
5.5
C/W
*Applies only to rated RF amplifier operation
AM1517-012
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/6
ELECTRICAL SPECIFICATIONS (Tcase
=
25
C)
Symbol
Test Conditions
Value
Uni t
Mi n.
Typ.
Max.
P
OUT
f
=
1.5 -- 1.7GHz
P
IN
=
1.7W
V
CC
=
28V
12
13
--
W
c
f
=
1.5 -- 1.7GHz
P
IN
=
1.7W
V
CC
=
28V
55
58
--
%
G
P
f
=
1.5 -- 1.7GHz
P
IN
=
1.7W
V
CC
=
28V
8.5
--
--
dB
N ote:
AM1517 ser ies vary P
IN
to achi eve P
OUT
; perf ormance guaranteed in 50 MHz increment s.
Alpha-Suff ix added t o AM1517 P/N designates band segment.
A -1500
=
1550 MH z
M -1620
=
1660 MH z
S -1625
=
1675 MH z
STATIC
Symbol
Test Condi tions
Valu e
Unit
Mi n.
Typ.
Max.
BV
CBO
I
C
=
4mA
I
E
=
0mA
45
--
--
V
BV
EBO
I
E
=
4mA
I
C
=
0mA
3.0
--
--
V
I
CBO
V
CB
=
28V
--
--
1
mA
h
FE
V
CE
=
5V
I
C
=
.8A
15
--
150
--
DYNAMIC
AM1517-012
2/6
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