1/8
May 2000
AM1517-025
RF & MICROWAVE TRANSISTORS
SATELLITE COMMUNICATIONS APPLICATIONS
SO42
hermetically sealed
ORDER CODE
AM1517-025
BRANDING
1517-25
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METALLIC/CERAMIC HERMETIC PACKAGE
P
OUT
= 25 W MIN. WITH 8.5 dB GAIN
DESCRIPTION
The AM1517-025 power transistor is designed
specifically for Satellite communications applica-
tions in the 1.5 - 1.7 frequency range.
The device is capable of withstanding any mis-
match load condition at any phase angle (VSWR
:1) under full rated conditions. The unit is an
overlay, emitter site ballasted, geometry utilizing a
refractory/Gold metallization system.
The AM1517-025 is supplied in the AMPAC
TM
Hermetic/Ceramic package with internal Input/
Output matching structures.
PIN CONNECTION
1
4
3
2
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS(T
CASE
= 25
0
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation* ( Tc
50
0
C)
45
W
I
C
Device Current*
2.5
A
V
CC
Collector-Supply Voltage*
30
V
T
j
Junction Temperature
200
0
C
T
STG
Storage Temperature
-65 to +200
0
C
THERMAL DATA
R
th(j-c)
Junction-Case Thermal Resistance*
3.3
0
C/W
* Applies only to rated RF amplifier operation
AM1517-025
2/8
ELECTRICAL SPECIFICATION(T
CASE
= 25
0
C)
STATIC
Symbol
Parameter
Min.
Typ.
Max.
Unit
BV
CBO
I
C
= 8 mA
I
E
= 0 mA
45
---
---
V
BV
EBO
I
E
= 8 mA
I
C
= 0 mA
3.0
---
---
V
I
CBO
V
CB
= 28 V
---
---
2
mA
h
FE
V
CE
= 5 V
I
C
= 1.6 A
15
---
150
---
DYNAMIC
Symbol
Parameter
Min.
Typ.
Max.
Unit
P
OUT
f = 1.5 - 1.7 GHz
P
IN
= 3.5 W
V
CC
= 28 V
25
---
---
W
D
f = 1.5 - 1.7 GHz
P
IN
= 3.5 W
V
CC
= 28 V
50
--
---
%
G
P
f = 1.5 - 1.7 GHz
P
IN
= 3.5 W
V
CC
= 28 V
8.5
---
---
dB
Note: AM1517 series vary P
IN
to achieve P
OUT
; performance guaranteed in 50 MHz increments.
Alpha-Suffix added to AM1517 P/N desigates band segment.
M - 1620 - 1660 MHz
S - 1625 - 1675 MHz
REF. 1015989D
3/8
AM1517-025
Collector Efficiency vs Case Temperature
Output Power & Collector Efficiency vs Input Power
Output Power vs Case Temperature
Output Power & Collector Efficiency vs Collector Voltage
Gain vs Case Temperature
TYPICAL PERFORMANCE
AM1517-025
4/8
IMPEDANCE DATA
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
Z
IN
TYPICAL INPUT
IMPEDANCE
P
OUT
= 25 W
V
CC
= 28 V
Z
O
= 50 OHMS
P
OUT
= 25 W
V
CC
= 28 V
Z
O
= 50 OHMS
Frequency
MHz
Z
IN
(
)
Z
CL
(
)
1.5 GHz
8.5 + j 13.0
12.0 - j 4.0
1.6 GHz
8.0 + j 12.5
7.5 - j 4.5
1.7 GHz
9.0 + j 12.0
9.0 - j 6.0
5/8
AM1517-025
REV. 1022332D
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
C1,C2
0.4-2.5pF GIGA TRIM VARIABILE CAPACITOR
C3
100pF SURFACE MOUNT CERAMIC CHIP CAPACITOR
C4
1000pF RESIN SEALED # 8-35 THREADED FEEDTHRU CAPACITOR
C5
0.1
F/50v CERAMIC MOLDED RADIAL LEAD CAPACITOR
L1
3 TURN AIR WOUND COIL #26AWG, ID. 0.070 [1.77] BUS BAR WIRE
L2
3 TURN AIR WOUND COIL #26AWG, ID. 0.070 [1.77] BUS BAR WIRE
BOARD
ALUMINA CERAMIC SUBSTRATE, HIGH POLISHED 1.0" SQ [25.40], 0.025" [0.63] THK.
r=9.6,
200 MICROINCHES Au, BOTH SIDES
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