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Электронный компонент: AM2729-125

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RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
.400 x .500 2LFL (S038)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
125 W MIN. WITH 7.0 dB GAIN
DESCRIPTION
The AM2729-125 device is a high power silicon
bipolar NPN transistor specifically designed for
medium pulse S-Band radar output and driver
applications.
This device is characterized at 50
sec pulse
width and 10% duty cycle, but is capable of op-
eration over a range of pulse widths, duty cycles
and temperatures. Low RF thermal resistance,
refractory/gold metallization and computerized
automatic wire bonding techniques ensure high
reliability and product consistency (including
phase characteristics).
The AM2729-125 is supplied in the BIGPAC
TM
Hermetic Metal/Ceramic package with internal In-
put/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
plications.
PIN CONNECTION
BRANDING
2729-125
ORDER CODE
AM2729-125
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
P
DISS
Power Dissipation*
(T
C
75
C)
500
W
I
C
Device Current*
16
A
V
CC
Collector-Supply Voltage*
45
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
0.35
C/W
*Applies only to rated RF amplifier operation
AM2729-125
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbo l
Test Con dition s
Value
Uni t
Min .
Typ .
Max.
P
OUT
f
=
2700
-
2900 MHz
P
IN
=
25 W
V
CC
=
40 V
125
--
--
W
c
f
=
2700
-
2900 MHz
P
IN
=
25 W
V
CC
=
40 V
35
--
--
%
G
P
f
=
2700
-
2900 MHz
P
IN
=
25 W
V
CC
=
40 V
7.0
--
--
dB
Note:
Pul se Width
=
50
Sec
Duty Cycle
=
10%
STATIC
Symbo l
T est Con ditio ns
Value
Un it
Mi n.
Typ .
Max.
BV
CBO
I
C
=
50 mA
I
E
=
0 mA
55
65
--
V
BV
EBO
I
E
=
10 mA
I
C
=
0 mA
3.5
4.5
--
V
BV
CES
I
C
=
50 mA
V
BE
=
0 V
55
65
--
V
I
CES
V
BE
=
0 V
V
CE
=
40 V
--
--
40
mA
h
FE
V
CE
=
5 V
I
C
=
5 A
30
80
300
--
DYNAMIC
TYPICAL PERFORMANCE
TYPICAL BROADBAND
EFFICIENCY
TYPICAL BROADBAND
PERFORMANCE
AM2729-125
TYPICAL EFFICIENCY @ 2.7 GHz
TYPICAL EFFICIENCY @ 2.8 GHz
TYPICAL EFFICIENCY @ 2.9 GHz
TYPICAL PERFORMANCE @ 2.7 GHz
TYPICAL PERFORMANCE @ 2.8 GHz
TYPICAL PERFORMANCE @ 2.9 GHz
TYPICAL PERFORMANCE (cont'd)
AM2729-125
IMPEDANCE DATA
L
Z
IN
H
M
Z
CL
H
L
M
P
IN
=
25 W
V
CC
=
40 V
Normalized to 50 ohms
FREQ.
Z
IN
(
)
Z
CL
(
)
H
=
2.9 GHz
8.8 + j 7.3
3.7
-
j 2.7
M
=
2.8 GHz
9.4 + j 8.2
4.1
-
j 2.9
L
=
2.7 GHz
9.9 + j 9.1
4.4
-
j 3.2
AM2729-125
TEST CIRCUIT
All dimensions are in inches
C1
:
1000pf RF Feedthrough
C2
:
0.1
F, 100V Ceramic Capacitor
C3
:
33pf Microwave Chip Capacitor
C4
:
100
F, 63V Electrolytic Capacitor
L1, L2 :
#26 Wire, 2 Turns, 0.08" I.D.
Board Material: Alumina, Er = 9.6, H = 25mil
AM2729-125