August 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.310 x .310 2LFL (S064)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
5:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
6.0 W MIN. WITH 9.3 dB GAIN
DESCRIPTION
The AM80912-005 is designed for specialized
avionics applications, including JTIDS, where
power is provided under pulse formats utilizing
short pulse widths and high burst or overall duty
cycles.
The AM80912-005 i s housed in the unique
IMPAC
TM
Hermetic Metal/Ceramic package with
PIN CONNECTION
BRANDING
80912-5
ORDER CODE
AM80912-005
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation*
(T
C
75
C)
25
W
I
C
Device Current*
0.9
A
V
CC
Collector-Supply Voltage*
32
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
7.0
C/W
*Applies only to rated RF amplifier operation
AM80912-005
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/4
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditions
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
960 -- 1215MHz
P
IN
=
0.7W
V
CC
=
28V
6.0
--
--
W
c
f
=
960 -- 1215MHz
P
IN
=
0.7W
V
CC
=
28V
45
--
--
%
G
P
f
=
960 -- 1215MHz
P
IN
=
0.7W
V
CC
=
28V
9.3
--
--
dB
N ote:
Pul se format:
6.4
S on 6.6
S off , r epeat f or 3.3 ms, then off for 4.5125 ms.
Duty Cycle: Burst 49.2%, overall 20.8%
STATIC
Symbol
Test Condi tions
Valu e
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
1mA
I
E
=
0mA
48
--
--
V
BV
EBO
I
E
=
1mA
I
C
=
0mA
3.5
--
--
V
BV
CER
IC
=
5mA
R
BE
=
10
48
--
--
V
I
CES
V
BE
=
0V
V
CE
=
28V
--
--
0.5
mA
h
FE
V
CE
=
5V
I
C
=
250mA
30
--
300
--
DYNAMIC
AM80912-005
2/4
TEST CIRCUIT
All dimensions are in inches.
Substrate material: .025 thick AI
2
O
3
C1
: 100
F Electrolytic Capacitor, 63V
C2
: .1
F Ceramic Capacitor
C3
: Feedthrough Bypass SCI 712-022
C4
: .6 -- 4.5 pF, 2 pls, Johanson Gigatrim Capacitor
C5
: .6 -- 4.5 pF, 2 pls, Johanson Gigatrim Capacitor
C6
: 100 pF Chip Capacitor
L1
: No. 26 Wire, 4 Turn
L2
: No. 26 Wire, 4 Turn
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
P
IN
=
0.7 W
V
CC
=
28 V
Normalized to 50 ohms
L
H
Z
CL
H
L
Z
IN
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
L
=
960 MHz
8.2 + j 8.52
10.5 + j 12.9
M
=
1090 MHz
11.1 + j 8.34
9.4 + j 11.3
H
=
1215 MHz
15.6 + j 6.8
9.0 + j 8.3
AM80912-005
3/4
PACKAGE MECHANICAL DATA
.318/
.306
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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AM80912-005
4/4
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