August 1992
L-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x . 400 2NLFL (S042)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
RUGGEDIZED VSWR
:1
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
55 W MIN. WITH 6.6 dB GAIN
DESCRIPTION
The AM81214-060 device is a high power transistor
specifically designed for L-Band radar pulsed out-
put and driver applications.
The device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding
:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM81214-060 is supplied in the AMPAC
TM
Hermetic Metal/Ceramic package with internal
Input/Output matching structures.
PIN CONNECTION
BRANDING
81214-60
ORDER CODE
AM81214-060
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation*
(T
C
100
C)
107
W
I
C
Device Current*
5.0
A
V
CC
Collector-Supply Voltage*
32
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
1.4
C/W
*Applies only to rated RF amplifier operation
AM81214-060
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/6
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