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Электронный компонент: AM81719-030

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PRELIMINARY DATA
September 1992
TELEMETRY APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 400 SQ 2LFL (M147)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
28 W MIN. WITH 6.7 dB GAIN
DESCRIPTION
The AM81719-030 is a high power silicon NPN
bipolar transistor designed for Class C, CW com-
munications and telemetry applications in the 1.75
- 1.85 GHz frequency range.
An emitter site ballasted refractory/gold overlay
die geometry computerized automatic wire bonding
is employed to ensure long term reliability and
product consistency.
AM81719-030 is supplied in the industry-standard
AMPAC
TM
hermetic metal/ceramic package.
PIN CONNECTION
BRANDING
81719-030
ORDER CODE
AM81719-030
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
P
DISS
Power Dissipation*
67.3
W
I
C
Device Current*
2.67
A
V
CC
Collector-Supply Voltage*
28
V
T
J
Junction Temperature
200
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
2.6
C/W
*Applies only to rated RF amplifier operation
AM81719-030
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
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ELECTRICAL SPECIFICATIONS (Tcase
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
1.75 -- 1.85GHz
P
IN
=
6.0W
V
CC
=
28V
28
--
--
W
c
f
=
1.75 -- 1.85GHz
P
IN
=
6.0W
V
CC
=
28V
40
--
--
%
G
P
f
=
1.75 -- 1.85GHz
P
IN
=
6.0W
V
CC
=
28V
6.7
--
--
dB
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
10mA
I
E
=
0mA
45
--
--
V
BV
EBO
I
E
=
10mA
I
C
=
0mA
3.0
--
--
V
BV
CES
IC
=
10mA
45
--
--
V
I
CES
V
BE
=
0V
V
CE
=
28V
--
--
5
mA
h
FE
V
CE
=
5V
I
C
=
2mA
15
--
150
--
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT & COLLECTOR
EFFICENCY vs POWER INPUT
AM81719-030
2/4
TEST CIRCUIT
Ref. Dwg. No. C125450A
All dimensions are in inches.
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
P
IN
=
6.0 W
V
CC
=
28 V
Normalized to 50 ohms
Z
IN
Z
CL
L
H
H
L
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
L
=
1.7 GHz
10.5 + j 16.0
2.5
-
j 2.0
M
=
1.8 GHz 10.25 + j 15.0
2.5 + j 0.0
H
=
1.9 GHz
9.5 + j 14.5
2.5 + j 2.0
AM81719-030
3/4
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0147
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
AM81719-030
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