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Электронный компонент: AM81719-040

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RF & MICROWAVE TRANSISTORS
TELEMETRY APPLICATIONS
. 400 X .400 2 LF L (M228)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
40 W MIN. WITH 7 dB GAIN
DESCRIPTION
The AM81719-040 is a high power silicon NPN
bipolar transistor designed for Class C, CW com-
munications and telemetry applications in the
1.75 - 1.85 GHz frequency range.
An emitter-ballasted refractory-gold overlay die
geometry with computerized automatic wire-
bonding is employed to ensure long-term reliabil-
ity and product consistency.
PIN CONNECTION
BRANDING
81719-40
ORDER CO DE
AM81719-040
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Valu e
Un it
P
DISS
Power Dissipation*
79.5
W
I
C
Device Current*
4.8
A
V
CC
Collector-Supply Voltage*
30
V
T
J
Junction Temperature
200
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
2.2
C/W
*Applies only to rated RF amplifier operation
AM81719-040
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
PRELI MINARY DAT A
July 6, 1995
1/3
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbo l
Test Cond iti on s
Valu e
Un it
Min.
T yp.
Max.
P
OUT
f
=
1750
-
1850 MHz
P
IN
=
8.0 W
V
CC
=
28 V
40
--
--
W
c
f
=
1750
-
1850 MHz
P
IN
=
8.0 W
V
CC
=
28 V
43
--
--
%
G
P
f
=
1750
-
1850 MHz
P
IN
=
8.0 W
V
CC
=
28 V
6.7
--
--
dB
STATIC
Symbo l
T est Co ndi tions
Value
Unit
Min .
T yp.
Max.
BV
CBO
I
C
=
50 mA
I
E
=
0 mA
42
--
--
V
BV
EBO
I
E
=
4 mA
I
C
=
0 mA
3.5
--
--
V
BV
CES
I
C
=
80 mA
45
--
--
V
I
CBO
V
CB
=
28 V
--
--
8
mA
h
FE
V
CE
=
30 V
I
C
=
2.5 A
30
--
300
--
DYNAMIC
Ref.: Dwg. No. 101-000698
TEST CIRCUIT
AM81719-040
July 6, 1995
2/3
Ref: Dwg. No. 12-0228 rev. B
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-T HOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIE S
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
AM81719-040
July 6, 1995
3/3