August 1992
S-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x . 400 2NLFL (S042)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
10:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT IMPEDANCE MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
3.0 W. MIN. WITH 5.7 dB GAIN
.
BANDWIDTH
=
400 MHz
DESCRIPTION
The AM82731-003 device is a medium power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed driver applications.
This device is capable of operation over a wide range
of pulse widths, duty cycles, and temperatures and
can withstand a 10:1 output VSWR. Low RF thermal
resistance, refractory/gold metallization, and auto-
matic wire bonding techniques ensure high reliability
and product consistency.
The AM82731-003 is supplied in the hermetic met-
al/ceramic package with internal input/output imped-
ance matching circuitry, and is intended for military
and other high reliability applications.
PIN CONNECTION
BRANDI NG
82731-3
ORDER CODE
AM 82731-003
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
P
DISS
Power Dissipation*
(T
C
100
C)
23
W
I
C
Device Current*
0.9
A
V
CC
Collector-Supply Voltage*
34
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
AM82731-003
1. Collector
3. Emitter
2. Base
4. Base
R
TH
(j-c)
Junction-Case Thermal Resistance
6.5
C/W
*Applies only to rated RF amplifier operation
THERMAL DATA
1/4
TEST CIRCUIT
All dimensions are in inches.
Substrate material: .025 thick Al
2
O
3
(Er
=
9.6)
C1
: 100 pF Microwave Chip Capacitor
C2
: 100 pF Microwave Chip Capacitor
(Note: Capacitor is mounted on its thin side)
C3
: 1500 pF, RF Feedthru
C4
: 100
F, Electrolytic Capacitor
L1
: No. 32 Wire, 0.500 Inch Long
L2
: Printed RF Choke
L3
: Printed RF Choke
TYPICAL INPUT
IMPEDANCES
TYPICAL COLLECTOR
LOAD IMPEDANCES
P
IN
=
0.8W
V
CC
=
30 V
Normalized at 50 ohms
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
L
=
2.7 GHz
11.5 + j 14.0
22.5 + j 5.5
=
2.9 GHz
11.5 + j 12.5
19.5 + j 5.0
M
=
3.1 GHz
10.0 + j 15.5
14.5 + j 2.0
=
3.3 GHz
11.0 + j 19.0
14.5
-
j 2.0
H
=
3.5 GHz
11.0 + j 20.5
17.5
-
j 3.5
AM82731-003
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PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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AM82731-003
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