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Электронный компонент: AM82731-012

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PRELIMINARY DATA
August 1992
S-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2LFL (S036)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
12 W MIN. WITH 6.0 dB GAIN
DESCRIPTION
The AM82731-012 device is a high power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed output and driver applications.
This device is capable of operaion over a wide
range of pulse widths, duty cycles, and tempera-
tures and can withstand a 3:1 output VSWR with
a + 1 dB input overdrive. Low RF thermal resist-
ance, refractory/gold metallization, and automatic
wire bonding techniques ensure high reliability and
product consistency (including phase charac-
teristics).
The AM82731-012 is supplied in the Hermetic Met-
al/Ceramic package with internal Input/Output im-
pedance matching sircuitry, and is intended for
military and other high reliability applications.
PIN CONNECTION
BRANDING
82731-12
ORDER CODE
AM82731-012
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation*
(T
C
50C)
50
W
I
C
Device Current*
2.0
A
V
CC
Collector-Supply Voltage*
46
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
4.0
C/W
*Applies only to rated RF amplifier operation
AM82731-012
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
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ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
P
OUT
f
=
2700 --3100 MHz
P
IN
=
3.0W
V
CC
=
40V
12
--
--
W
c
f
=
2700 --3100 MHz
P
IN
=
3.0W
V
CC
=
40V
30
--
--
%
G
P
f
=
2700 --3100 MHz
P
IN
=
3.0W
V
CC
=
40V
6.0
--
--
dB
Note:
Pulse Width
=
100
S
Duty Cycle
=
10%
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
7mA
I
E
=
0mA
55
--
--
V
BV
EBO
I
E
=
1mA
I
C
=
0mA
3.5
--
--
V
BV
CER
IC
=
7mA
R
BE
=
10
55
--
--
V
I
CES
V
CE
=
40V
--
--
5
mA
h
FE
V
CE
=
V
I
C
=
600mA
30
--
300
--
DYNAMIC
PACKAGE MECHANICAL DATA
AM82731-012
2/3
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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AM82731-012
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