August 1992
S-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2LFL (S036)
hermetically sealed
.
LOW PARASITIC, DOUBLE LEVEL MET-
AL DESIGN
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
3:1 VSWR @ 1 dB OVERDRIVE
.
LOW RF THERMAL RESISTANCE
.
INPUT/OUTPUT IMPEDANCE MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
25 W MIN. WITH 6.2 dB GAIN
DESCRIPTION
The AM82731-025 device is a high power silicon bi-
polar NPN transistor specifically designed for S-Band
radar pulsed output and driver applications.
This device is capable of operation over a wide range
of pulse widths, duty cycles, and temperatures and
can withstand a 3:1 output VSWR with a +1dB input
over drive. Low RF thermal resistance, refrac-
tory/gold metallization, and automatic wire bonding
techniques ensure high reliability and product con-
sistency (including phase characteristics).
The AM82731-025 is supplied in the Hermetic Met-
al/Ceramic package with internal Input/Output im-
pedance matching circuitry, and is intended for mili-
tary and other high reliability applications.
PIN CONNECTION
BRANDING
82731-25
ORDER CODE
AM82731-025
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation*
(T
C
50
C)
100
W
Ic
Device Current*
4
A
V
CC
Collector-Supply Voltage*
46
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
2.0
C/W
*Applies only to rated RF amplifier operation
AM82731-025
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/4
All dimensions are in inches.
Sustrate material: .025 thick Al
2
O
3
(Er = 9.6)
C1
: 22 pF Chip Capacitor
C2
: 1500 pF RF Feedthrough
L1
: No. 26 Wire, 2 Turn, 0.08 Inch I.D.
L2
: No. 26 Wire, 2 Turn, 0.08 Inch I.D.
TEST CIRCUIT
TYPICAL INPUT
IMPEDANCES
TYPICAL COLLECTOR
LOAD IMPEDANCES
P
IN
=
6.0 W
V
CC
=
40 V
Normalized to 50 ohms
FREQ.
Z
IN
(
)
Z
CL
(
)
L
=
2.7 GHz
12.0 + j 3.0
15.0
-
j 4.0
=
2.8 GHz
9.5 + j 2.5
17.0
-
j 3.0
M
=
2.9 GHz
6.5 + j 0.0
15.5
-
j 3.0
=
3.0 GHz
6.0
-
j 1.5
14.5
-
j 3.0
H
=
3.1 GHz
5.0
-
j 3.0
11.0
-
j 3.0
Z
IN
Z
CL
IMPEDANCE DATA
AM82731-025
3/4
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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AM82731-025
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