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Электронный компонент: AM83135-015

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PRELIMINARY DATA
July 27, 1994
S-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.310 x .310 2LFL (S064)
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
15 W MIN. WITH 5.2 dB GAIN
DESCRIPTION
The AM83135-015 device is a high power silicon
bipolar NPN transistor specifically designed for
S-Band radar pulsed output and driver applica-
tions.
This device is characterized at 100
sec pulse
width and 10% duty cycle, but is capable of op-
eration over a range of pulse widths, duty cycles,
and temperatures, and can withstand a 3:1 out-
put VSWR with a + 1 dB input overdrive. Low RF
thermal resistance, refractory/gold metallization,
and computerized automatic wire bonding tech-
niques ensure high reliability and product consis-
tency (including phase characteristics).
The AM83135-015 is supplied in the IMPACTM
Hermetic Metal/Ceramic package with internal
Input/Output impedance matching circuitry, and
is intended for military and other high reliability
applications.
PIN CONNECTION
BRANDING
83135-15
ORDER CODE
AM83131-015
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation*
(T
C
50C)
71
W
I
C
Device Current*
3.0
A
V
CC
Collector-Supply Voltage*
46
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
2.8
C/W
*Applies only to rated RF amplifier operation
AM83135-015
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/3
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
P
OUT
f
=
3.1
-
3.5 GHz
P
IN
=
4.5 W
V
CC
=
40 V
15
--
--
W
c
f
=
3.1
-
3.5 GHz
P
OUT
=
15 W
V
CC
=
40 V
30
--
--
%
P
G
f
=
3.1
-
3.5 GHz
P
OUT
=
15 W
V
CC
=
40 V
5.2
--
--
dB
Note:
Pulse Width
=
100
S
Duty Cycle
=
10%
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
10 mA
I
E
=
0 mA
55
--
--
V
BV
EBO
I
E
=
2 mA
I
C
=
0 mA
3.5
--
--
V
BV
CER
I
C
=
10 mA
R
BE
=
10
55
--
--
V
I
CES
V
BE
=
0 V
V
CE
=
40 V
--
--
8
mA
h
FE
V
CE
=
5 V
I
C
=
1 A
30
--
300
--
DYNAMIC
AM83135-015
2/3
Ref.: Dwg. No. 12-0221 rev. A
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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AM83135-015
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