AVS10
AUTOMATIC VOLTAGE SWITCH (SMPS < 300W)
CONTROLLER
s
50/60Hz FULL COMPATIBILITY
s
INTEGRATED VOLTAGE REGULATOR
s
TRIGGERING PULSE TRAIN OF THE TRIAC
s
PARASITIC FILTER
s
LOW POWER CONSUMPTION
TRIAC
s
HIGH EFFICIENCY AND SAFETY SWITCHING
s
UNINSULATED PACKAGE : AVS10CB
s
INSULATED PACKAGE 2500V
(RMS
) : AVS10CBI
s
V
DRM
=
600V
s
I
T(RMS)
: 8A
March 1995
DESCRIPTION
The AVS10 kit is an automatic mains selector
(110/220V AC) to be used in SMPS < 300 W. It
is composed of 2 devices :
The Controller is optimized for low consump-
tion and high security triggering of the triac.
When connected to V
SS
, the mode input acti-
vates an additional option. If the main power
drops from 220V to 110V, the triac control re-
mains locked to the 220V mode and avoids
any high voltage spike when the voltage is re-
stored to 220V.
When connected to V
DD
, the mode input de-
sactivates this option.
The TRIAC is specially designed for this appli-
cation. An optimization between sensitivity and
dynamic parameters of the triac gate highly
reduces the losses of supply resistor and al-
lows excellent immunity against disturbances.
P
DIP8
(Plast ic)
B
TO 220AB
(Plastic)
A1
A2
G
PIN CONNECTION
1/8
ABSOLUTE MAXIMUM RATINGS
CONTROLLER AVS1ACP08
(1) Gate supply : IG = 100mA di/dt = 1A/
s
* For either polarity of electrode A2 voltage with reference to electrode A1
(2) Tj = 110
C
Symbol
Parameter
Value
Un it
Mi n.
Max.
VSS
Supply voltage
- 12
0.5
V
VI / VO
I / O voltage
VSS - 0.5
0.5
V
II / IO
I / O current
- 40
+ 40
mA
Tstg
Storage Temperature
- 60
+ 150
C
Toper
Operating Temperature code
" C "
0
+ 70
C
TRIAC AVS10CB / AVS10CBI T
j
= +25
C (unless otherwise specified)
Symbol
Parameter
Value
Un it
VDRM
Repetitive peak off-state voltage (2)
600
V
IT(RMS)
RMS on-state current
(360
conduction angle)
AVS10CB
TC = 80
C
8
A
AVS10CBI
TC = 70
C
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
C )
t = 8.3ms
t = 10ms
85
80
A
I2t
I2t value
t = 10ms
32
A2s
dI/dt
Critical rate of rise of on-state current (1)
Repetitive
F = 50Hz
20
A/
s
Non
Repetitive
100
dv/dt *
Linear slope up to 0.67 VDRM
Gate open
Tj = 110
C
50
V/
s
Tstg
Tj
Storage Temperature
Operating Junction Temperature
- 40 + 150
0 + 110
C
BLOCK DIAGRAM
Q
Q
Reset
CP
S
CP
OSC/IN
OSC/OUT
MODE
Parasitic
Filter
Peak Voltage
Dectector
AVS1ACP08
A1
A2
Triggering
Time
Controller
AVS10CB
or
AVS10CBI
Supply
1
4
8
2
3
Oscillator
Zero Crossing
Detector
5
3
4
2
1
V
V
G
G
DD
7
DD
V
V
V
M
SS
Mains
mode
Controller
MR
AVS10
2/8
* For either polarity of electrode A2 voltage with reference to electrode A1.
DC GENERAL ELECTRICAL CHARACTERISTICS
TRIAC AVS10CB / AVS10CBI
Symb ol
Parameter
Value
Unit
Min.
Max.
VGD
VD = VDRM RL = 3.3k
Pulse duration> 20
s
Tj = 110
C
0.2
V
VTM *
ITM = 11A
tp = 10ms
Tj = 25
C
1.75
V
IDRM *
VDRM rated
Gate open
Tj = 25
C
10
A
Tj = 110
C
500
THERMAL RESISTANCES
TRIAC AVS10CB / AVS10CBI
Symb ol
Parameter
Value
Unit
Rth (j-a)
Junction-to-ambient
60
C/W
Rth (j-c) DC Junction-to-case for DC
AVS10CB
3.5
C/W
AVS10CBI
4.4
Rth (j-c) AC
Junction-to-case for 360
conduction angle ( F = 50Hz)
AVS10CB
2.6
C/W
AVS10CBI
3.3
AVS10
3/8
Fig.1 :Maximum RMS power dissipation versus RMS on-
state current (F = 60Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig. 2 :Correlation between maximum mean power dissipa-
tion and maximum allowable temperatures (Tamb and
Tcase) for different thermal resistances heatsink + contact
(AVS10CB).
Fig. 4 :Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t
10ms, and corresponding
value of I2t.
Fig. 5 :On-state characteristics (maximum values).
Fig. 3 :Correlation between maximum mean power dissipa-
tion and maximum allowable temperatures (Tamb and
Tcase) for different thermal resistances heatsink + contact
(AVS10CBI).
AVS10
4/8
Symbol
Parameter
Value
Uni t
Mi n
Typ
Max
VSS (pin 1) (Vreg)
Shunt regulator
- 10
- 9
- 8
V
ISS (pin 1) (Vreg)
(@ VSS = 9V)
Supply current
0.4
30
mA
ISS (pin 1)
(@ triac gate non
connected)
Quiescent current
0.7
mA
f (pin 3)
(@ R = 91k
)
(C = 100pF)
Oscillator frequency
42
44
46
kHz
VM (pin 8) Vth (3)
Peak voltage of detection high-threshold
4.08
4.25
4.42
V
VM (pin 8) Vh (3)
Peak voltage of detection hysteresis
0.370
0.4
0.420
V
(1) VM (pin 8) Vth (3)
Zero-crossing detection high-threshold
95
110
125
mV
VM (pin 8) Vh (3)
Zero-crossing detection hysteresis
27
50
80
mV
(2)
Vrazht (4)
Power-on-reset activation threshold
Vreg x 0.89
V
(2)
Vrazlt (4)
Power-down-reset activation threshold
3
6.5
V
Mode (pin 7)
VIL
(4)
VIH
(4)
0.7 Vreg
0.3 Vreg
V
VG (pin 5)
VOL (IVG = 25mA)
Leakage current (VG = VDD)
650
+ 10
mV
A
DC GENERAL ELECTRICAL CHARACTERISTICS (continued)
CONTROLLER AVS1ACP08 T
oper
= 25
C
(unless otherwise specified)
NOTES :
(1) : This value gives a typical noise immunity on the zero-crossing detectionof 110mV x 1018/18 = 6.20V on the main supply
(2) : See following diagram
(3) : Voltage referred to VSS
(4) : Voltage referred to VDD
POWER-ON AND POWER-OFF RESET BEHAVIOUR
0V
0V
-2.7V
-2.7V
Vrazht
Vrazlt
Vreg = V
- V
SS
DD
Normal operation
Power-on
reset
Un determined
Undetermined
Reset
power-off
AVS10
5/8
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