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February 2002
STB9NC60
STB9NC60-1
N-CHANNEL 600V - 0.6
- 9A - D
2
PAK/I
2
PAK
PowerMeshTMII MOSFET
(1)I
SD
9A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
s
TYPICAL R
DS
(on) = 0.6
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
TM
II is
the evolution of the first
generation of MESH OVERLAY
TM.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STB9NC60
STB9NC60-1
600 V
600 V
< 0.75
< 0.75
9.0 A
9.0 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25C
9
A
I
D
Drain Current (continuos) at T
C
= 100C
5.7
A
I
DM
(1)
Drain Current (pulsed)
36
A
P
TOT
Total Dissipation at T
C
= 25C
125
W
Derating Factor
1.0
W/C
dv/dt
Peak Diode Recovery voltage slope
3.5
V/ns
T
stg
Storage Temperature
55 to 150
C
T
j
Max. Operating Junction Temperature
D
2
PAK
I
2
PAK
1
3
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STB9NC60 / STPBNC60-1
2/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
1.0
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
9
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
850
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 4.5 A
0.6
0.75
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
=20 V
,
I
D
= 4.5A
9
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1420
pF
C
oss
Output Capacitance
205
pF
C
rss
Reverse Transfer
Capacitance
35
pF
3/10
STB9NC60 / STPBNC60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 300V, I
D
= 4.5 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
20
ns
t
r
Rise Time
16
ns
Q
g
Total Gate Charge
V
DD
= 480V, I
D
= 9.0 A,
V
GS
= 10V
55
77
nC
Q
gs
Gate-Source Charge
4.5
nC
Q
gd
Gate-Drain Charge
31
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 300 V, I
D
= 4.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
64
32
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480V, I
D
= 9.0 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
19
13
32
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
9.0
A
I
SDM
(2)
Source-drain Current (pulsed)
36
A
V
SD
(1)
Forward On Voltage
I
SD
= 9 A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 9 A, di/dt = 100A/s,
V
DD
= 100V, Tj = 150C
(see test circuit, Figure 5)
600
ns
Q
rr
Reverse Recovery Charge
4.7
C
I
RRM
Reverse Recovery Current
15.5
A
Thermal Impedance
Safe Operating Area
STB9NC60 / STPBNC60-1
4/10
Transconductance
Transconductance
Output Characteristics
Transfer Characteristics
Capacitance Variations
Gate Charge vs Gate-source Voltage
5/10
STB9NC60 / STPBNC60-1
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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