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Электронный компонент: BAR28

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BAR 28
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode featuring high break-
down, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection
and pulse application with broad dynamic range.
Matched batches are available on request.
November 1994
DO 35
(Glass)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive Peak Reverse Voltage
70
V
I
F
Forward Continuous Current*
T
a
= 25
C
15
mA
I
FSM
Surge non Repetitive Forward Current*
t
p
1s
50
mA
T
stg
T
j
Storage and Junction Temperature Range
- 65 to 200
- 65 to 200
C
T
L
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230
C
ABSOLUTE RATINGS (limiting values)
Symbol
Test Conditions
Value
Unit
R
th(j-a)
Junction-ambient*
400
C/W
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
** Pulse test: t
p
300
s
<
2%.
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
BR
T
amb
= 25
C
I
R
= 10
A
70
V
V
F
* *
T
amb
= 25
C
I
F
= 1mA
0.41
V
T
amb
= 25
C
I
F
= 15mA
1
I
R
* *
T
amb
= 25
C
V
R
= 50V
0.2
A
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C
T
amb
= 25
C
V
R
= 0V
f = 1MHz
2
pF
T
amb
= 25
C
I
F
= 5mA
Krakauer Method
100
ps
DYNAMIC CHARACTERISTICS
1/3
2/3
Figure 1. Forward current versus forward
voltage at low level (typical values).
Figure 2. Capacitance C versus reverse
applied voltage V
R
(typical values).
Figure 3. Reverse current versus ambient
temperature.
Figure 4. Reverse current versus continuous
reverse voltage (typical values).
BAR 28
Cooling method : by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.15g
PACKAGE MECHANICAL DATA
DO 35 Glass
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands
- Singapore - Spain - Sweden - Switzerland - Taiwan - United Kingdom - U.S.A.
note 2
B
A
B
C
note 1
note 1
D
D
O
/
O
/
O
/
E
E
REF.
DIMENSIONS
NOTES
Millimeters
Inches
Min.
Max.
Min.
Max.
A
3.050
4.500
0.120
0.117
1 - The lead diameter
D is not controlled over zone E
2 - The minimum axial lengh within which the device may be
placed with its leads bent at right angles is 0.59"(15 mm)
B
12.7
0.500
C
1.530
2.000
0.060
0.079
D
0.458
0.558
0.018
0.022
E
1.27
0.050
3/3
BAR 28