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BAR 18
BAS70-04 06
SMALL SIGNAL SCHOTTKY DIODES
December 2001 - Ed: 3A
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
70
V
I
F
Continuous forward current
70
mA
P
tot
Power dissipation (note 1)
Tamb = 25C
250
mW
T
stg
Maximum storage temperature range
- 65 to +150
C
Tj
Maximum operating junction temperature *
150
C
T
L
Maximum temperature for soldering during 10s
260
C
Note 1: for double diodes, Ptot is the total dissipation of both diodes
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
R
th (j-a)
Junction to ambient (*)
500
C/W
(*) Mounted on epoxy board with recommended pad layout.
THERMAL RESISTANCE
SOT-23
(Plastic)
K
N.C.
A
BAR18
A
K1
K2
BAS70-06
K
A1
A2
BAS70-05
A1
K2
K1
A2
BAS70-04
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
Low turn-on and high breakdown voltage diodes in-
tended for ultrafast switching and UHF detectors in
hybrid micro circuits.
DESCRIPTION
BAR 18 / BAS70-04 06
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Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
BR
Tj = 25C I
R
= 10
A
70
V
V
F
*
Tj = 25C I
F
= 1mA
410
mV
I
R
**
Tj = 25C V
R
= 50V
200
nA
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C
Tj = 25C V
R
= 0V F = 1MHz
2
pF
*
Tj = 25
C I
F
= 5mA Krakauer Method
100
ps
DYNAMIC CHARACTERISTICS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0E+0
2.0E-3
4.0E-3
6.0E-3
8.0E-3
1.0E-2
1.2E-2
1.4E-2
1.6E-2
1.8E-2
2.0E-2
VFM(V)
IFM(A)
Tj=100C
Typical values
Tj=25C
Maximum values
Tj=25C
Typical values
Fig. 1-1: Forward voltage drop versus forward
current (low level).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1E-4
1E-3
1E-2
7E-2
VFM(V)
IFM(A)
Tj=100C
Typical values
Tj=25C
Maximum values
Tj=25C
Typical values
Fig. 1-2: Forward voltage drop versus forward
current (high level).
* Effective carrier life time.
Pulse test:
* tp = 380
s,
< 2%
** tp = 5 ms,
< 2%
BAR 18 / BAS70-04 06
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1
10
100
0.1
1.0
2.0
VR(V)
C(pF)
F=1MHz
Tj=25C
Fig. 4: Junction capacitance versus reverse voltage
applied (typical values).
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
0.01
0.10
1.00
tp(s)
Zth(j-a)/Rth(j-a)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration (alumine
substrate 10mm*8mm*0.5mm).
0
5
10
15
20
25
30
35
40
45
50
150
200
250
300
350
S(Cu) (mm)
Rth(j-a) (C/W)
P=0.25W
Fig. 6: Thermal resistance junction to ambient ver-
sus copper surface under each lead (Epoxy printed
circuit board FR4, copper thickness: 35
m).
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70
1E-3
1E-2
1E-1
1E+0
1E+1
VR(V)
IR(A)
Tj=25C
Tj=100C
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
0
25
50
75
100
125
150
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Tj(C)
IR(A)
VR=70V
Fig. 3: Reverse leakage current versus junction
temperature (typical values)
BAR 18 / BAS70-04 06
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PACKAGE MECHANICAL DATA
SOT23 (Plastic)
B
E
S
e
e1
A
D
c
L
H
A1
0.9
0.035
0.9
0.035
1.9
0.075
mm
inch
2.35
0.92
1.1
0.043
1.1
0.043
1.45
0.037
0.9
0.035
FOOTPRINT DIMENSIONS
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
0.89
1.4
0.035
0.055
A1
0
0.1
0
0.004
B
0.3
0.51
0.012
0.02
c
0.085
0.18
0.003
0.007
D
2.75
3.04
0.108
0.12
e
0.85
1.05
0.033
0.041
e1
1.7
2.1
0.067
0.083
E
1.2
1.6
0.047
0.063
H
2.1
2.75
0.083
0.108
L
0.6 typ.
0.024 typ.
S
0.35
0.65
0.014
0.026
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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Ordering type
Marking
Package
Weight
Base qty
Delivery mode
BAR18
D76
SOT-23
0.01g
3000
Tape & reel
BAS70-04
D96
SOT-23
0.01g
3000
Tape & reel
BAS70-05
D97
SOT-23
0.01g
3000
Tape & reel
BAS70-06
D98
SOT-23
0.01g
3000
Tape & reel
s
Epoxy meets UL94,V0
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