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BAS70-07S / BAS70-08S
December 2001 - Ed: 2A
RF DETECTION DIODE
s
LOW DIODE CAPACITANCE
s
LOW SERIES INDUCTANCE AND RESISTANCE
s
SURFACE MOUNT PACKAGE
FEATURES AND BENEFITS
Dual and Triple Schottky diode in SOT323-6L
package. This diode is intented to be used in RF
application for signal detection and temperature
compensation.
DESCRIPTION
SOT323-6L
Symbol
Parameter
Value
Unit
V
R
Continuous reverse voltage
70
V
I
F
Continuous forward current
70
mA
I
FRM
Repetitive peak forward current
70
mA
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal
1
A
P
Power Dissipation
Ta = 55C
250
mW
T
stg
Storage temperature range
- 65 to +150
C
Tj
Maximum junction temperature
150
C
TL
Maximum temperature for soldering
260
C
ABSOLUTE RATINGS (limiting values)
1
2
3
6
5
4
BAS70-07S SCHEMATIC DIAGRAM
1
2
3
6
5
4
BAS70-08S SCHEMATIC DIAGRAM
BAS70-07S / BAS70-08S
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Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
V
F
Forward voltage drop
I
F
= 1 mA
0.41
V
I
F
= 10 mA
0.75
V
I
F
= 15 mA
1
V
I
R
Reverse leakage current
V
R
= 70 V
10
A
V
BR
Breakdown voltage
I
R
= 10 A
70
V
STATIC ELECTRICAL CHARACTERISTICS (Tj = 25C otherwise specified)
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
C
Junction capacitance
V
R
= 0 V
F = 1 MHz
2
pF
R
F
Differential forward
resistance
I
F
= 10 mA
F = 100 MHz
30
Ohm
L
s
Series inductance
1.5
nH
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
th (j-a)
Junction to ambient on printed circuit board FR4
with recommended pad layout
500
C/W
THERMAL RESISTANCE
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1.E-01
1.E+00
1.E+01
1.E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VFM(V)
Tj=150C
Tj=150C
Tj=125C
Tj=125C
Tj=85C
Tj=85C
Tj=25C
Tj=25C
Tj=-40C
Tj=-40C
IFM(mA)
Fig. 1: Forward voltage drop versus forward
current (typical values).
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0
10
20
30
40
50
60
70
IR(A)
VR(V)
Tj = 150C
Tj = 25C
Tj = 85C
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
10
100
1000
0.1
1.0
10.0
Rf( )
IF(mA)
F = 10kHz
Tj = 25C
Fig. 3: Differential forward resistance versus
forward current (typical values).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0
10
20
30
40
50
60
70
C(pF)
VR(V)
F = 1MHz
Vosc = 30mV
Tj = 25C
RMS
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values).
10.0
100.0
1000.0
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
Zth(j-a)(C/W)
tp(s)
Fig. 5: Variation of thermal impedance junction to
ambient versus pulse duration (printed circuit
board, epoxy FR4).
300
350
400
450
500
550
600
0
5
10
15
20
25
30
35
40
45
50
Rth(j-a)
S(mm)
Fig. 6: Thermal resistance junction to ambient
versus copper surface under each lead (printed
circuit board, epoxy FR4).
BAS70-07S / BAS70-08S
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2001 STMicroelectronics - Printed in Italy - All rights reserved.
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PACKAGE MECHANICAL DATA
SOT323-6L
A2
A
A1
E
b
HE
D
e
e
Q1
c
0.3mm
1mm
1mm
0.35mm
2.9mm
FOOTPRINT DIMENSIONS (millimeters)
Type
Marking
Package
Weight
Base qty
Delivery mode
BAS70-07S
D32
SOT323-6L
0.006g
3000
Tape & reel
BAS70-08S
D33
s
Epoxy meets UL94, V0
MARKING
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
0.8
1.1
0.031
0.043
A1
0
0.1
0
0.004
A2
0.8
1
0.031
0.039
b
0.15
0.3
0.006
0.012
c
0.1
0.18
0.004
0.007
D
1.8
2.2
0.071
0.086
E
1.15
1.35
0.045
0.053
e
0.65 Typ.
0.025 Typ.
HE
1.8
2.4
0.071
0.094
Q1
0.1
0.4
0.004
0.016
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