ChipFind - документация

Электронный компонент: BAS70W

Скачать:  PDF   ZIP
1/5
BAS70J / BAS70W
BAS70-04W /BAS70-05W / BAS70-06W
May 2000 - Ed: 4B
SMALL SIGNAL SCHOTTKY DIODE
n
VERY SMALL CONDUCTION LOSSES
n
NEGLIGIBLE SWITCHING LOSSES
n
LOW FORWARD VOLTAGE DROP
n
SURFACE MOUNT DEVICE
FEATURES AND BENEFITS
Schottky barrier diodes encapsulated either in
SOT-323 or SOD-323 small SMD packages.
Single and double diodes with different pining are
available.
DESCRIPTION
K
A
A
NC
NC
K
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
70
V
I
F
Continuous forward current
70
mA
I
FSM
Surge non repetitive forward current
tp = 10 ms
1
A
P
tot
Power dissipation (note 1)
Tamb = 25
C
SOD-323
230
mW
SOT-323
T
stg
Maximum storage temperature range
- 65 to +150
C
Tj
Maximum operating junction temperature *
150
C
T
L
Maximum temperature for soldering during 10s
260
C
Note 1: for double diodes, Ptot is the total dissipation of both diodes.
ABSOLUTE RATINGS (limiting values)
BAS70W
A1
A1
A2
A2
K
K
BAS70-05W
A1
K2
A2
K1
A2
K1
K2
A1
BAS70-04W
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
K1
K1
K2
K2
A
A
BAS70-06W
BAS70J
A
K
76
SOT-323
SOD-323
BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W
2/5
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
BR
Tj = 25
C
I
R
= 10
A
70
V
V
F
*
Tj = 25
C
I
F
= 1mA
410
mV
I
R
**
Tj = 25
C
V
R
= 50V
100
nA
Pulse test:
* tp = 380
s,
< 2%
** tp = 5 ms,
< 2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C
Tj = 25
C
V
R
= 0V
F = 1MHz
2
pF
*
Tj = 25
C
I
F
= 5mA
Krakauer Method
100
ps
* Effective carrier life time.
DYNAMIC CHARACTERISTICS
Symbol
Parameters
Value
Unit
R
th (j-a)
Junction to ambient (*)
SOD-323
550
C/W
SOT-323
C/W
(*) Mounted on epoxy board, with recommended pad layout.
THERMAL RESISTANCE
BAS70J / BAS70W / BAS70-04W /
BAS70-05W / BAS70-06W
3/5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1E-4
1E-3
1E-2
7E-2
VFM(V)
IFM(A)
Tj=100
C
Typical values
Tj=25
C
Maximum values
Tj=25
C
Typical values
Fig. 1: Forward voltage drop versus forward
current.
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70
1E-3
1E-2
1E-1
1E+0
1E+1
VR(V)
IR(
A)
Tj=25
C
Tj=100
C
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
0
25
50
75
100
125
150
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Tj(
C)
IR(
A)
VR=70V
Fig. 3: Reverse leakage current versus junction
temperature (typical values).
1
10
100
0.1
1.0
2.0
VR(V)
C(pF)
F=1MHz
Tj=25
C
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values).
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
0.01
0.10
1.00
tp(s)
Zth(j-a)/Rth(j-a)
Single pulse
= 0.1
= 0.2
= 0.5
T
=tp/T
tp
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
FR4
with
recommended
pad
layout,
S(Cu)=35
m).
0
5
10
15
20
25
30
35
40
45
50
300
350
400
450
500
550
600
S(Cu) (mm )
Rth(j-a) (
C/W)
P=0.2W
Fig. 6: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35
m).
BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W
4/5
PACKAGE MECHANICAL DATA
SOT-323
E
c
L
H
b
D
A
A1
e
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
0.8
1.1
0.031
0.043
A1
0.0
0.1
0.0
0.004
b
0.25
0.4
0.010
0.016
c
0.1
0.26 0.004
0.010
D
1.8
2.0
2.2
0.071 0.079 0.086
E
1.15
1.25
1.35 0.045 0.049 0.053
e
0.65
0.026
H
1.8
2.1
2.4
0.071 0.083 0.094
L
0.1
0.2
0.3
0.004 0.008 0.012
0
30
0
30
BAS70J / BAS70W / BAS70-04W /
BAS70-05W / BAS70-06W
5/5
PACKAGE MECHANICAL DATA
SOD-323
H
b
D
E
A1
A
L
Q1
c
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
1.17
0.046
A1
0
0.1
0
0.004
b
0.25
0.44
0.01
0.017
c
0.1
0.25
0.004
0.01
D
1.52
1.8
0.06
0.071
E
1.11
1.45
0.044
0.057
H
2.3
2.7
0.09
0.106
L
0.1
0.46
0.004
0.02
Q1
0.1
0.41
0.004
0.016
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
BAS70W
D28
SOT-323
0.006g
3000
Tape & reel
BAS70-04W
D31
SOT-323
0.006g
3000
Tape & reel
BAS70-05W
D30
SOT-323
0.006g
3000
Tape & reel
BAS70-06W
D29
SOT-323
0.006g
3000
Tape & reel
BAS70J
76
SOD-323
0.005g
3000
Tape & reel
n
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2000 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com