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Электронный компонент: BAT48

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BAT 47
BAT 48
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose, metal to silicon diodes featuring
very low turn-on voltage and fast switching.
These devices have integrated protection against
excessivevoltage such as electrostaticdischarges.
August 1999 Ed: 1A
DO 35
(Glass)
Symbol
Parameter
BAT47
BAT48
Unit
V
RRM
Repetitive Peak Reverse Voltage
20
40
V
I
F
Forward Continuous Current*
T
a
= 25
C
350
mA
I
FRM
Repetitive Peak Fordward Current*
t
p
1s
0.5
1
A
I
FSM
Surge non Repetitive Forward Current*
t
p
= 10ms
7.5
A
t
p
= 1s
1.5
P
tot
Power Dissipation*
T
a
= 25
C
330
mW
T
stg
T
j
Storage and Junction Temperature Range
- 65 to + 150
- 65 to + 125
C
C
T
L
Maximum Temperature for Soldering during 10s at 4mm from
Case
230
C
ABSOLUTE RATINGS (limiting values)
Symbol
Test Conditions
Value
Unit
R
th(j-l)
Junction-ambient*
300
C/W
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
1/5
* Pulse test: t
p
300
s
<
2%.
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)
I
R
= 10
A
BAT47
20
V
I
R
= 25
A
BAT48
40
V
F
*
T
j
= 25
C
I
F
= 0.1mA
All Types
0.25
V
T
j
= 25
C
I
F
= 1mA
0.3
T
j
= 25
C
I
F
= 10mA
0.4
T
j
= 25
C
I
F
= 30mA
BAT47
0.5
T
j
= 25
C
I
F
= 150mA
0.8
T
j
= 25
C
I
F
= 300mA
1
T
j
= 25
C
I
F
= 50mA
BAT48
0.5
T
j
= 25
C
I
F
= 200mA
0.75
T
j
= 25
C
I
F
= 500mA
0.9
I
R
*
T
j
= 25
C
V
R
= 1.5V
All Types
1
A
T
j
= 60
C
10
T
j
= 25
C
V
R
= 10V
BAT47
4
T
j
= 60
C
20
T
j
= 25
C
V
R
= 20V
10
T
j
= 60
C
30
T
j
= 25
C
V
R
= 10V
BAT48
2
T
j
= 60
C
15
T
j
= 25
C
V
R
= 20V
5
T
j
= 60
C
25
T
j
= 25
C
V
R
= 40V
25
T
j
= 60
C
50
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C
T
j
= 25
C
V
R
= 0V
f = 1MHz
20
pF
T
j
= 25
C
V
R
= 1V
12
t
rr
T
j
= 25
C
I
F
= 10mA
V
R
= 1V
i
rr
= 1mA
R
L
= 100
10
ns
DYNAMIC CHARACTERISTICS
2/5
BAT 47/BAT 48
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
Figure 3. Reverse current versus junction
temperature.
Figure 4. Reverse current versus continuous
reverse voltage (typical values).
3/5
BAT 47/BAT 48
Figure 5. Capacitance C versus reverse
4/5
BAT 47/BAT 48
DO 35 Glass
note 2
B
A
B
C
note 1
note 1
D
D
O
/
O
/
O
/
E
E
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
3.05
4.50
0.120
0.177
B
1.53
2.00
0.060
0.079
C
12.7
0.500
D
0.458
0.558
0.018
0.022
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Spec ifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval
of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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Cooling method: by convection and conduction.
Marking: clear, ring at cathode end.
Weight: 0.015g
PACKAGE MECHANICAL DATA
5/5
BAT 47/BAT 48